@inproceedings{a5627d5066a54e17ac224196484140f3,
title = "Numerical modeling of reduction in surface-related lags and current slump in GaAs FETs",
abstract = "We perform a two-dimensional transient analysis of field-plate GaAs MESFETs in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that drain lag and current slump due to surface states are reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface states. Dependence of lag phenomena and current slump on field-plate length and SiO2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.",
keywords = "GaAs FET, current slump, drain lag, field plate, gate lag, surface state",
author = "F. Hafiz and M. Kumeno and T. Tanaka and K. Horio",
year = "2013",
month = dec,
day = "1",
doi = "10.1109/TENCON.2013.6718452",
language = "English",
isbn = "9781479928262",
series = "IEEE Region 10 Annual International Conference, Proceedings/TENCON",
booktitle = "2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings",
note = "2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 ; Conference date: 22-10-2013 Through 25-10-2013",
}