TY - JOUR
T1 - Numerical Simulation of GaAs MESFET's on the Semi-insulating Substrate Compensated by Deep Traps
AU - Horio, Kazushige
AU - Yanai, Hisayoshi
AU - Ikoma, Toshiaki
N1 - Funding Information:
Manuacript received May 12, 1988; revised July 9, 1988. This work was supported by the Special Research Fund (1) at the Shibaura Institute of Technology. A part of this work was supported by the Ministry of Science and Education under Grant-in-Aid 62750268. K. Horio and H. Yanai are with the Shibaura Institute of Technology, 3-9-14, Shibaura. Minato-ku. Tokyo 108, Japan. T. lkoma is with the Institute of Industrial Science. University of Tokyo, 7-22-1, Roppongi. Minato-ku. Tokyo 106. Japan. IEEE Log Number 8823680.
PY - 1988/11
Y1 - 1988/11
N2 - Numerical simulations of GaAs MESFET's are performed in which impurity compensation by deep traps in the semi-insulating substrate is considered. It is found that the higher acceptor density in the substrate results in lower device current due to the formation of a space-charge layer at the channel-substrate interface. It is also found that the drain currents increase continuously with the drain voltage because electrons are injected to fill the traps in the substrate and a current path through the substrate is formed. This substrate current becomes remarkable for shorter gate-length MESFET's on a substrate with lower acceptor and trap densities. It is suggested that, to minimize short-channel effects in GaAs MESFET’s, the acceptor density as well as the trap density in the semi-insulating substrate must be high.
AB - Numerical simulations of GaAs MESFET's are performed in which impurity compensation by deep traps in the semi-insulating substrate is considered. It is found that the higher acceptor density in the substrate results in lower device current due to the formation of a space-charge layer at the channel-substrate interface. It is also found that the drain currents increase continuously with the drain voltage because electrons are injected to fill the traps in the substrate and a current path through the substrate is formed. This substrate current becomes remarkable for shorter gate-length MESFET's on a substrate with lower acceptor and trap densities. It is suggested that, to minimize short-channel effects in GaAs MESFET’s, the acceptor density as well as the trap density in the semi-insulating substrate must be high.
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U2 - 10.1109/16.7387
DO - 10.1109/16.7387
M3 - Article
AN - SCOPUS:0024105622
SN - 0018-9383
VL - 35
SP - 1778
EP - 1785
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 11
ER -