Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102s. The currents become constant temporarily at around 10-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steadystate values. The slow transients are attributed to trapping and detrapping by deep levels.
|Number of pages||2|
|Publication status||Published - 1992 Jan|
- Field-effect transistors
- Semiconductor devices and materials
ASJC Scopus subject areas
- Electrical and Electronic Engineering