Numerical simulation of trapping effects on DRAIN-CURRENT transients of gaas mesfets

K. Horio

doi:10.1049/el:19920182

Numerical simulation of trapping effects on DRAIN-CURRENT transients of gaas mesfets

K. Horio

Research output: Contribution to journal › Article › peer-review

Abstract

Drain-current transients of GaAs MESFETs are simulated in the range from 10^-13 to 10²s. The currents become constant temporarily at around 10^-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steadystate values. The slow transients are attributed to trapping and detrapping by deep levels.

Original language	English
Pages (from-to)	295-296
Number of pages	2
Journal	Electronics Letters
Volume	28
Issue number	3
DOIs	https://doi.org/10.1049/el:19920182
Publication status	Published - 1992 Jan

Keywords

Field-effect transistors
Semiconductor devices and materials
Transistors

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19920182

Cite this

@article{4de772a2fead4fdfbb33c3115d811c12,

title = "Numerical simulation of trapping effects on DRAIN-CURRENT transients of gaas mesfets",

abstract = "Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102s. The currents become constant temporarily at around 10-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steadystate values. The slow transients are attributed to trapping and detrapping by deep levels.",

keywords = "Field-effect transistors, Semiconductor devices and materials, Transistors",

author = "K. Horio",

year = "1992",

month = jan,

doi = "10.1049/el:19920182",

language = "English",

volume = "28",

pages = "295--296",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "3",

}

TY - JOUR

T1 - Numerical simulation of trapping effects on DRAIN-CURRENT transients of gaas mesfets

AU - Horio, K.

PY - 1992/1

Y1 - 1992/1

N2 - Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102s. The currents become constant temporarily at around 10-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steadystate values. The slow transients are attributed to trapping and detrapping by deep levels.

AB - Drain-current transients of GaAs MESFETs are simulated in the range from 10-13 to 102s. The currents become constant temporarily at around 10-11 ('quasisteady state'), but decrease or increase after some periods, reaching real steadystate values. The slow transients are attributed to trapping and detrapping by deep levels.

KW - Field-effect transistors

KW - Semiconductor devices and materials

KW - Transistors

UR - http://www.scopus.com/inward/record.url?scp=0026441654&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026441654&partnerID=8YFLogxK

U2 - 10.1049/el:19920182

DO - 10.1049/el:19920182

M3 - Article

AN - SCOPUS:0026441654

SN - 0013-5194

VL - 28

SP - 295

EP - 296

JO - Electronics Letters

JF - Electronics Letters

IS - 3

ER -

Numerical simulation of trapping effects on DRAIN-CURRENT transients of gaas mesfets

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this