On-chip thermoelectric module comprised of oxide thin film legs

S. Saini; P. Mele; K. Miyazaki; A. Tiwari

doi:10.1016/j.enconman.2016.02.001

On-chip thermoelectric module comprised of oxide thin film legs

S. Saini, P. Mele, K. Miyazaki, A. Tiwari

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

On-chip thermoelectric thin film modules containing 5 legs of n-type (Al_0.02Zn_0.98O) and 5 legs of p-type (Ca₃Co₄O₉) were fabricated on Al₂O₃, SrTiO₃ single crystal, and fused silica substrates by pulsed laser deposition technique. Performance of modules was evaluated using ad hoc customized system where the module was set vertically for temperature gradient. The maximum output power (P_max) was obtained on Al₂O₃ (0 0 0 1) single crystal substrate with temperature difference (ΔT)=230°C (T_h = 300 °C): P_max = 29.9 pW. The value of maximum output power increases with increase of temperature difference (ΔT). These results are encouraging for the practical applications of thermoelectric oxide thin films.

Original language	English
Pages (from-to)	251-257
Number of pages	7
Journal	Energy Conversion and Management
Volume	114
DOIs	https://doi.org/10.1016/j.enconman.2016.02.001
Publication status	Published - 2016 Apr 15
Externally published	Yes

Keywords

On-chip module
Oxide thin film
Pulsed laser deposition
Thermoelectric
Thermoelectric module

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Nuclear Energy and Engineering
Fuel Technology
Energy Engineering and Power Technology

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10.1016/j.enconman.2016.02.001

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@article{4c6ebae829b74ccba342b218a3974e65,

title = "On-chip thermoelectric module comprised of oxide thin film legs",

abstract = "On-chip thermoelectric thin film modules containing 5 legs of n-type (Al0.02Zn0.98O) and 5 legs of p-type (Ca3Co4O9) were fabricated on Al2O3, SrTiO3 single crystal, and fused silica substrates by pulsed laser deposition technique. Performance of modules was evaluated using ad hoc customized system where the module was set vertically for temperature gradient. The maximum output power (Pmax) was obtained on Al2O3 (0 0 0 1) single crystal substrate with temperature difference (ΔT)=230°C (Th = 300 °C): Pmax = 29.9 pW. The value of maximum output power increases with increase of temperature difference (ΔT). These results are encouraging for the practical applications of thermoelectric oxide thin films.",

keywords = "On-chip module, Oxide thin film, Pulsed laser deposition, Thermoelectric, Thermoelectric module",

author = "S. Saini and P. Mele and K. Miyazaki and A. Tiwari",

note = "Funding Information: P.M. and S.S. thank Institute for Sustainable Sciences and Development (ISSD), Hiroshima University, Higashi Hiroshima, Japan for partial financial support under the framework of Japan Science and Technology Agency program to Disseminate Tenure Tracking System. P.M. acknowledges partial financial support of Kakenhi (C) Grant No. 263901103 . S.S. and A.T. want to thank US NSF for support through grant 1121252 ( MRSEC ) and 1407650 . P.M. and S.S. thank Prof T. Takabatake, Prof T. Suzuki, Prof K. Suekuni and H. Honda from ADSM, Hiroshima University, Japan for the fruitful discussion and experimental support. We appreciate Prof. P.E. Hopkins, Department of Mechanical and Aerospace Engineering, University of Virginia, USA, for the contribution of thermal conductivity experiment and fruitful discussion. Publisher Copyright: {\textcopyright} 2016 Elsevier Ltd. All rights reserved.",

year = "2016",

month = apr,

day = "15",

doi = "10.1016/j.enconman.2016.02.001",

language = "English",

volume = "114",

pages = "251--257",

journal = "Energy Conversion and Management",

issn = "0196-8904",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - On-chip thermoelectric module comprised of oxide thin film legs

AU - Saini, S.

AU - Mele, P.

AU - Miyazaki, K.

AU - Tiwari, A.

N1 - Funding Information: P.M. and S.S. thank Institute for Sustainable Sciences and Development (ISSD), Hiroshima University, Higashi Hiroshima, Japan for partial financial support under the framework of Japan Science and Technology Agency program to Disseminate Tenure Tracking System. P.M. acknowledges partial financial support of Kakenhi (C) Grant No. 263901103 . S.S. and A.T. want to thank US NSF for support through grant 1121252 ( MRSEC ) and 1407650 . P.M. and S.S. thank Prof T. Takabatake, Prof T. Suzuki, Prof K. Suekuni and H. Honda from ADSM, Hiroshima University, Japan for the fruitful discussion and experimental support. We appreciate Prof. P.E. Hopkins, Department of Mechanical and Aerospace Engineering, University of Virginia, USA, for the contribution of thermal conductivity experiment and fruitful discussion. Publisher Copyright: © 2016 Elsevier Ltd. All rights reserved.

PY - 2016/4/15

Y1 - 2016/4/15

N2 - On-chip thermoelectric thin film modules containing 5 legs of n-type (Al0.02Zn0.98O) and 5 legs of p-type (Ca3Co4O9) were fabricated on Al2O3, SrTiO3 single crystal, and fused silica substrates by pulsed laser deposition technique. Performance of modules was evaluated using ad hoc customized system where the module was set vertically for temperature gradient. The maximum output power (Pmax) was obtained on Al2O3 (0 0 0 1) single crystal substrate with temperature difference (ΔT)=230°C (Th = 300 °C): Pmax = 29.9 pW. The value of maximum output power increases with increase of temperature difference (ΔT). These results are encouraging for the practical applications of thermoelectric oxide thin films.

AB - On-chip thermoelectric thin film modules containing 5 legs of n-type (Al0.02Zn0.98O) and 5 legs of p-type (Ca3Co4O9) were fabricated on Al2O3, SrTiO3 single crystal, and fused silica substrates by pulsed laser deposition technique. Performance of modules was evaluated using ad hoc customized system where the module was set vertically for temperature gradient. The maximum output power (Pmax) was obtained on Al2O3 (0 0 0 1) single crystal substrate with temperature difference (ΔT)=230°C (Th = 300 °C): Pmax = 29.9 pW. The value of maximum output power increases with increase of temperature difference (ΔT). These results are encouraging for the practical applications of thermoelectric oxide thin films.

KW - On-chip module

KW - Oxide thin film

KW - Pulsed laser deposition

KW - Thermoelectric

KW - Thermoelectric module

UR - http://www.scopus.com/inward/record.url?scp=84958567855&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84958567855&partnerID=8YFLogxK

U2 - 10.1016/j.enconman.2016.02.001

DO - 10.1016/j.enconman.2016.02.001

M3 - Article

AN - SCOPUS:84958567855

SN - 0196-8904

VL - 114

SP - 251

EP - 257

JO - Energy Conversion and Management

JF - Energy Conversion and Management

ER -

On-chip thermoelectric module comprised of oxide thin film legs

Abstract

Keywords

ASJC Scopus subject areas

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