One-Carrier Numerical Model for GaAs MESFET’s(with p-Buffer Layer) on the Semi-insulating Substrate Including Deep Levels

K.Horio K.Horio, Y.Fuseya Y.Fuseya, H.Kusuki H.Kusuki, H.Yanai H.Yanai, Kazushige Horio

Research output: Contribution to journal › Article › peer-review

Cite this

@article{55949ab55c7f435282e4aafdefb6f3a3,

title = "One-Carrier Numerical Model for GaAs MESFET{\textquoteright}s(with p-Buffer Layer) on the Semi-insulating Substrate Including Deep Levels",

author = "K.Horio K.Horio and Y.Fuseya Y.Fuseya and H.Kusuki H.Kusuki and H.Yanai H.Yanai and Kazushige Horio",

year = "1990",

month = apr,

day = "1",

language = "English",

volume = "73",

pages = "506--509",

journal = "Trans. IEICE",

}