The Si-doping dependence of absorption coefficient and photoluminescence (PL) spectra of GaN grown by metalorganic chemical vapor deposition (MOCVD) was studied at room temperature. Band gap narrowing and band tailing effect were observed in the absorption spectra of GaN samples with high carrier concentration. A clear red shift and broadening of the PL emission peak were observed with increasing dopant concentration, which could also be attributed to the band tailing effect. This study shows that the band tailing effect plays an important role in determining the optical properties of Si-doped GaN.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||9 A/B|
|Publication status||Published - 1999 Sept 15|
ASJC Scopus subject areas
- Physics and Astronomy(all)