Optically induced defects in vitreous silica

S. Juodkazis; M. Watanabe; H. B. Sun; S. Matsuo; J. Nishii; H. Misawa

doi:10.1016/S0169-4332(99)00430-4

Optically induced defects in vitreous silica

S. Juodkazis, M. Watanabe, H. B. Sun, S. Matsuo, J. Nishii, H. Misawa

Research output: Contribution to journal › Conference article › peer-review

21 Citations (Scopus)

Abstract

We report the observation of photoluminescence (PL) in optically damaged vitreous silica (v-SiO₂) and its gradual decrease by annealing at temperature range from room temperature to 773 K. Optical damage was induced by tightly focused picosecond or femtosecond irradiation inside v-SiO₂. PL bands at 280, 470 and 650 nm were observed. The PL can be excited by 250 nm irradiation, which corresponds to the absorption band of the oxygen vacancy, V_O. The decrease of PL with annealing is explained by structural modifications of the defects in the damaged area.

Original language	English
Pages (from-to)	696-700
Number of pages	5
Journal	Applied Surface Science
Volume	154
DOIs	https://doi.org/10.1016/S0169-4332(99)00430-4
Publication status	Published - 2000 Feb 1
Externally published	Yes
Event	The Symposium A on Photo-Excited Processes, Diagnostics and Applications of the 1999 E-MRS Spring Conference (ICPEPA-3) - Strasbourg, France Duration: 1999 Jun 1 → 1999 Jun 4

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(99)00430-4

Cite this

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title = "Optically induced defects in vitreous silica",

abstract = "We report the observation of photoluminescence (PL) in optically damaged vitreous silica (v-SiO2) and its gradual decrease by annealing at temperature range from room temperature to 773 K. Optical damage was induced by tightly focused picosecond or femtosecond irradiation inside v-SiO2. PL bands at 280, 470 and 650 nm were observed. The PL can be excited by 250 nm irradiation, which corresponds to the absorption band of the oxygen vacancy, VO. The decrease of PL with annealing is explained by structural modifications of the defects in the damaged area.",

author = "S. Juodkazis and M. Watanabe and Sun, {H. B.} and S. Matsuo and J. Nishii and H. Misawa",

note = "Funding Information: The present work was partly supported by a Grant-in-Aid for Scientific Research (A)(2) from the Ministry of Education, Science, Sports and Culture (09355008) and Satellite Venture Business Laboratory of the University of Tokushima. The authors thank Prof. H. Hosono for useful discussions.; The Symposium A on Photo-Excited Processes, Diagnostics and Applications of the 1999 E-MRS Spring Conference (ICPEPA-3) ; Conference date: 01-06-1999 Through 04-06-1999",

year = "2000",

month = feb,

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doi = "10.1016/S0169-4332(99)00430-4",

language = "English",

volume = "154",

pages = "696--700",

journal = "Applied Surface Science",

issn = "0169-4332",

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TY - JOUR

T1 - Optically induced defects in vitreous silica

AU - Juodkazis, S.

AU - Watanabe, M.

AU - Sun, H. B.

AU - Matsuo, S.

AU - Nishii, J.

AU - Misawa, H.

N1 - Funding Information: The present work was partly supported by a Grant-in-Aid for Scientific Research (A)(2) from the Ministry of Education, Science, Sports and Culture (09355008) and Satellite Venture Business Laboratory of the University of Tokushima. The authors thank Prof. H. Hosono for useful discussions.

PY - 2000/2/1

Y1 - 2000/2/1

N2 - We report the observation of photoluminescence (PL) in optically damaged vitreous silica (v-SiO2) and its gradual decrease by annealing at temperature range from room temperature to 773 K. Optical damage was induced by tightly focused picosecond or femtosecond irradiation inside v-SiO2. PL bands at 280, 470 and 650 nm were observed. The PL can be excited by 250 nm irradiation, which corresponds to the absorption band of the oxygen vacancy, VO. The decrease of PL with annealing is explained by structural modifications of the defects in the damaged area.

AB - We report the observation of photoluminescence (PL) in optically damaged vitreous silica (v-SiO2) and its gradual decrease by annealing at temperature range from room temperature to 773 K. Optical damage was induced by tightly focused picosecond or femtosecond irradiation inside v-SiO2. PL bands at 280, 470 and 650 nm were observed. The PL can be excited by 250 nm irradiation, which corresponds to the absorption band of the oxygen vacancy, VO. The decrease of PL with annealing is explained by structural modifications of the defects in the damaged area.

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U2 - 10.1016/S0169-4332(99)00430-4

DO - 10.1016/S0169-4332(99)00430-4

M3 - Conference article

AN - SCOPUS:0033889461

SN - 0169-4332

VL - 154

SP - 696

EP - 700

JO - Applied Surface Science

JF - Applied Surface Science

T2 - The Symposium A on Photo-Excited Processes, Diagnostics and Applications of the 1999 E-MRS Spring Conference (ICPEPA-3)

Y2 - 1 June 1999 through 4 June 1999

ER -

Optically induced defects in vitreous silica

Abstract

ASJC Scopus subject areas

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