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Passivation of bulk and surface defects in GaAs grown on Si substrate by radio frequency phosphine/hydrogen plasma exposure
G. Wang, T. Ogawa, K. Murase, K. Hori, T. Soga, B. Zhang, G. Zhao, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno
Research output: Contribution to journal › Article › peer-review
3
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(Scopus)