| Original language | English |
|---|---|
| Journal | 35th IEEE Semiconductor Interface Specialists Conference (SISC) |
| Publication status | Published - 2004 Dec 1 |
Permittivity Increase of Yttrium-Doped HfO2 through Structural Phase Transformation
K. Kita, K. Kyuno, A. Toriumi
Research output: Contribution to journal › Article › peer-review