Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films

H. Nishikawa; H. Fukui; E. Watanabe; D. Ito; K. S. Seol; Y. Ohki

Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO₂ films

H. Nishikawa, H. Fukui, E. Watanabe, D. Ito, K. S. Seol, Y. Ohki

Research output: Contribution to conference › Paper › peer-review

Abstract

The point defects in a-SiO₂ films, including thermal a-SiO₂ and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO₂ films implanted with B⁺ or P⁺ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO₂ prepared by the PECVD and SIMOX techniques.

Original language	English
Pages	59-62
Number of pages	4
Publication status	Published - 1998 Dec 1
Externally published	Yes
Event	Proceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn Duration: 1998 Sept 27 → 1998 Sept 30

Other

Other	Proceedings of the 1998 International Symposium on Electrical Insulating Materials
City	Toyohashi, Jpn
Period	98/9/27 → 98/9/30

ASJC Scopus subject areas

Engineering(all)
Materials Science(all)

Cite this

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title = "Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films",

abstract = "The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.",

author = "H. Nishikawa and H. Fukui and E. Watanabe and D. Ito and Seol, {K. S.} and Y. Ohki",

year = "1998",

month = dec,

day = "1",

language = "English",

pages = "59--62",

note = "Proceedings of the 1998 International Symposium on Electrical Insulating Materials ; Conference date: 27-09-1998 Through 30-09-1998",

}

TY - CONF

T1 - Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films

AU - Nishikawa, H.

AU - Fukui, H.

AU - Watanabe, E.

AU - Ito, D.

AU - Seol, K. S.

AU - Ohki, Y.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.

AB - The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.

UR - http://www.scopus.com/inward/record.url?scp=0032318228&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032318228&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0032318228

SP - 59

EP - 62

T2 - Proceedings of the 1998 International Symposium on Electrical Insulating Materials

Y2 - 27 September 1998 through 30 September 1998

ER -

Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO₂ films

Abstract

Other

ASJC Scopus subject areas

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