@inproceedings{1b96ee70cc2941639f6088d1b80f807d,
title = "Photoluminescence and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells",
abstract = "We investigated photoluminescence (PL) and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells by MOCVD. We observed the increase of PL intensity and reduction of the threshold by applying appropriate GaAsP barriers.",
keywords = "Gallium arsenide, MOCVD, Optical materials, Photoluminescence, Pulse measurements, Quantum well lasers, Space vector pulse width modulation, Surface emitting lasers, Threshold current, Vertical cavity surface emitting lasers",
author = "M. Kawaguchi and T. Miyamoto and S. Kawakami and A. Saito and F. Koyama",
year = "2003",
month = jan,
day = "1",
doi = "10.1109/ISCS.2003.1239912",
language = "English",
series = "IEEE International Symposium on Compound Semiconductors, Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "72--73",
booktitle = "2003 International Symposium on Compound Semiconductors, ISCS 2003",
note = "2003 International Symposium on Compound Semiconductors, ISCS 2003 ; Conference date: 25-08-2003 Through 27-08-2003",
}