Photoluminescence characterization of defects in thermal oxide

Hiroyuki Nishikawa; James H. Stathis

Photoluminescence characterization of defects in thermal oxide

Research output: Contribution to journal › Conference article › peer-review

Abstract

Defects in thermal oxides were investigated by a photoluminescence technique. Thermal oxides with a thickness of 100 nm grown either by dry or wet oxidation were studied. A broad PL band at 2-4 eV was observed for both dry and wet oxides. Effects of annealing under vacuum or in atmospheres of Ar or N₂ on the PL were also examined. The PL intensity was enhanced for the case of wet oxide by vacuum annealing at 700 °C. High-temperature anneal above 750 °C without O₂ further generated PL centers for both dry and wet oxides. The formation mechanism of the PL centers will be discussed in terms of the decomposition of oxide at Si/SiO₂ interface.

Original language	English
Pages (from-to)	289-294
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	592
Publication status	Published - 2000 Dec 1
Externally published	Yes
Event	Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures - Boston, MA, USA Duration: 1999 Nov 29 → 1999 Dec 1

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Photoluminescence characterization of defects in thermal oxide",

abstract = "Defects in thermal oxides were investigated by a photoluminescence technique. Thermal oxides with a thickness of 100 nm grown either by dry or wet oxidation were studied. A broad PL band at 2-4 eV was observed for both dry and wet oxides. Effects of annealing under vacuum or in atmospheres of Ar or N2 on the PL were also examined. The PL intensity was enhanced for the case of wet oxide by vacuum annealing at 700 °C. High-temperature anneal above 750 °C without O2 further generated PL centers for both dry and wet oxides. The formation mechanism of the PL centers will be discussed in terms of the decomposition of oxide at Si/SiO2 interface.",

author = "Hiroyuki Nishikawa and Stathis, {James H.}",

year = "2000",

month = dec,

day = "1",

language = "English",

volume = "592",

pages = "289--294",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures ; Conference date: 29-11-1999 Through 01-12-1999",

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TY - JOUR

T1 - Photoluminescence characterization of defects in thermal oxide

AU - Nishikawa, Hiroyuki

AU - Stathis, James H.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - Defects in thermal oxides were investigated by a photoluminescence technique. Thermal oxides with a thickness of 100 nm grown either by dry or wet oxidation were studied. A broad PL band at 2-4 eV was observed for both dry and wet oxides. Effects of annealing under vacuum or in atmospheres of Ar or N2 on the PL were also examined. The PL intensity was enhanced for the case of wet oxide by vacuum annealing at 700 °C. High-temperature anneal above 750 °C without O2 further generated PL centers for both dry and wet oxides. The formation mechanism of the PL centers will be discussed in terms of the decomposition of oxide at Si/SiO2 interface.

AB - Defects in thermal oxides were investigated by a photoluminescence technique. Thermal oxides with a thickness of 100 nm grown either by dry or wet oxidation were studied. A broad PL band at 2-4 eV was observed for both dry and wet oxides. Effects of annealing under vacuum or in atmospheres of Ar or N2 on the PL were also examined. The PL intensity was enhanced for the case of wet oxide by vacuum annealing at 700 °C. High-temperature anneal above 750 °C without O2 further generated PL centers for both dry and wet oxides. The formation mechanism of the PL centers will be discussed in terms of the decomposition of oxide at Si/SiO2 interface.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034503805&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034503805

SN - 0272-9172

VL - 592

SP - 289

EP - 294

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures

Y2 - 29 November 1999 through 1 December 1999

ER -

Photoluminescence characterization of defects in thermal oxide

Abstract

ASJC Scopus subject areas

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