Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen

K. S. Seol, A. Ieki, Y. Ohki, H. Nishikawa, M. Tachimori

Research output: Contribution to journal › Article › peer-review

Cite this

@article{72ca9f01f69345cf8a41ee6ef28e6dc3,

title = "Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen",

author = "Seol, {K. S.} and A. Ieki and Y. Ohki and H. Nishikawa and M. Tachimori",

year = "1996",

month = jan,

day = "1",

language = "English",

volume = "79",

pages = "412--416",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

}