Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen

Kwang Soo Seol; Akihito Ieki; Yoshimichi Ohki; Hiroyuki Nishikawa; Masaharu Tachimori

doi:10.1063/1.360845

Photoluminescence study on point defects in buried SiO₂ film formed by implantation of oxygen

Kwang Soo Seol, Akihito Ieki, Yoshimichi Ohki, Hiroyuki Nishikawa, Masaharu Tachimori

Research output: Contribution to journal › Article › peer-review

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Abstract

Defects in buried SiO₂ films in Si formed by implantation of oxygen ions were characterized by photoluminescence (PL) excited by KrF (5.0 eV) excimer laser and synchrotron radiation. Two PL bands were observed at 4.3 and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.1 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.1 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy. Through the change in the PL intensity with the film thickness, the buried SiO₂ film is considered to contain the oxygen vacancy defects in a high amount throughout the oxide.

Original language	English
Pages (from-to)	412-416
Number of pages	5
Journal	Journal of Applied Physics
Volume	79
Issue number	1
DOIs	https://doi.org/10.1063/1.360845
Publication status	Published - 1996 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen",

abstract = "Defects in buried SiO2 films in Si formed by implantation of oxygen ions were characterized by photoluminescence (PL) excited by KrF (5.0 eV) excimer laser and synchrotron radiation. Two PL bands were observed at 4.3 and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.1 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.1 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy. Through the change in the PL intensity with the film thickness, the buried SiO2 film is considered to contain the oxygen vacancy defects in a high amount throughout the oxide.",

author = "Seol, {Kwang Soo} and Akihito Ieki and Yoshimichi Ohki and Hiroyuki Nishikawa and Masaharu Tachimori",

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T1 - Photoluminescence study on point defects in buried SiO2 film formed by implantation of oxygen

AU - Seol, Kwang Soo

AU - Ieki, Akihito

AU - Ohki, Yoshimichi

AU - Nishikawa, Hiroyuki

AU - Tachimori, Masaharu

PY - 1996/1/1

Y1 - 1996/1/1

N2 - Defects in buried SiO2 films in Si formed by implantation of oxygen ions were characterized by photoluminescence (PL) excited by KrF (5.0 eV) excimer laser and synchrotron radiation. Two PL bands were observed at 4.3 and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.1 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.1 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy. Through the change in the PL intensity with the film thickness, the buried SiO2 film is considered to contain the oxygen vacancy defects in a high amount throughout the oxide.

AB - Defects in buried SiO2 films in Si formed by implantation of oxygen ions were characterized by photoluminescence (PL) excited by KrF (5.0 eV) excimer laser and synchrotron radiation. Two PL bands were observed at 4.3 and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.1 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.1 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy. Through the change in the PL intensity with the film thickness, the buried SiO2 film is considered to contain the oxygen vacancy defects in a high amount throughout the oxide.

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Photoluminescence study on point defects in buried SiO₂ film formed by implantation of oxygen

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