Physical mechanisms of performance instabilities such as gate-lag and kink phenomena in GaAs MESFETs

Y. Mitani; A. Wakabayashi; Kazushige Horio

doi:10.1109/RELPHY.2002.996634

Physical mechanisms of performance instabilities such as gate-lag and kink phenomena in GaAs MESFETs

Y. Mitani, A. Wakabayashi, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Slow current transients during turn-on (gate-lag) and abnormal increases in drain conductance (kink) in GaAs MESFETs are studied by two-dimensional analysis including surface states and impact ionization of carriers. Particularly, it is discussed how the gate-lag is influenced by impact ionization of carriers and how the surface-related kink depends on the structural parameters such as gate length and distance between source and gate.

Original language	English
Title of host publication	IEEE International Reliability Physics Symposium Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	189-193
Number of pages	5
Volume	2002-January
ISBN (Print)	0780373529
DOIs	https://doi.org/10.1109/RELPHY.2002.996634
Publication status	Published - 2002
Event	40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 - Dallas, United States Duration: 2002 Apr 7 → 2002 Apr 11

Other

Other	40th Annual IEEE International Reliability Physics Symposium, IRPS 2002
Country/Territory	United States
City	Dallas
Period	02/4/7 → 02/4/11

Keywords

Energy states
Gallium arsenide
HEMTs
Impact ionization
MESFETs
MODFETs
Pulse circuits
Structural engineering
Transient analysis
Voltage

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/RELPHY.2002.996634

Cite this

Physical mechanisms of performance instabilities such as gate-lag and kink phenomena in GaAs MESFETs. / Mitani, Y.; Wakabayashi, A.; Horio, Kazushige.
IEEE International Reliability Physics Symposium Proceedings. Vol. 2002-January Institute of Electrical and Electronics Engineers Inc., 2002. p. 189-193 996634.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mitani, Y, Wakabayashi, A & Horio, K 2002, Physical mechanisms of performance instabilities such as gate-lag and kink phenomena in GaAs MESFETs. in IEEE International Reliability Physics Symposium Proceedings. vol. 2002-January, 996634, Institute of Electrical and Electronics Engineers Inc., pp. 189-193, 40th Annual IEEE International Reliability Physics Symposium, IRPS 2002, Dallas, United States, 02/4/7. https://doi.org/10.1109/RELPHY.2002.996634

@inproceedings{cf64ad73f942432bba9cfb9ee66cebf0,

title = "Physical mechanisms of performance instabilities such as gate-lag and kink phenomena in GaAs MESFETs",

abstract = "Slow current transients during turn-on (gate-lag) and abnormal increases in drain conductance (kink) in GaAs MESFETs are studied by two-dimensional analysis including surface states and impact ionization of carriers. Particularly, it is discussed how the gate-lag is influenced by impact ionization of carriers and how the surface-related kink depends on the structural parameters such as gate length and distance between source and gate.",

keywords = "Energy states, Gallium arsenide, HEMTs, Impact ionization, MESFETs, MODFETs, Pulse circuits, Structural engineering, Transient analysis, Voltage",

author = "Y. Mitani and A. Wakabayashi and Kazushige Horio",

year = "2002",

doi = "10.1109/RELPHY.2002.996634",

language = "English",

isbn = "0780373529",

volume = "2002-January",

pages = "189--193",

booktitle = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "40th Annual IEEE International Reliability Physics Symposium, IRPS 2002 ; Conference date: 07-04-2002 Through 11-04-2002",

}

TY - GEN

T1 - Physical mechanisms of performance instabilities such as gate-lag and kink phenomena in GaAs MESFETs

AU - Mitani, Y.

AU - Wakabayashi, A.

AU - Horio, Kazushige

PY - 2002

Y1 - 2002

N2 - Slow current transients during turn-on (gate-lag) and abnormal increases in drain conductance (kink) in GaAs MESFETs are studied by two-dimensional analysis including surface states and impact ionization of carriers. Particularly, it is discussed how the gate-lag is influenced by impact ionization of carriers and how the surface-related kink depends on the structural parameters such as gate length and distance between source and gate.

AB - Slow current transients during turn-on (gate-lag) and abnormal increases in drain conductance (kink) in GaAs MESFETs are studied by two-dimensional analysis including surface states and impact ionization of carriers. Particularly, it is discussed how the gate-lag is influenced by impact ionization of carriers and how the surface-related kink depends on the structural parameters such as gate length and distance between source and gate.

KW - Energy states

KW - Gallium arsenide

KW - HEMTs

KW - Impact ionization

KW - MESFETs

KW - MODFETs

KW - Pulse circuits

KW - Structural engineering

KW - Transient analysis

KW - Voltage

UR - http://www.scopus.com/inward/record.url?scp=84949208209&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84949208209&partnerID=8YFLogxK

U2 - 10.1109/RELPHY.2002.996634

DO - 10.1109/RELPHY.2002.996634

M3 - Conference contribution

AN - SCOPUS:84949208209

SN - 0780373529

VL - 2002-January

SP - 189

EP - 193

BT - IEEE International Reliability Physics Symposium Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 40th Annual IEEE International Reliability Physics Symposium, IRPS 2002

Y2 - 7 April 2002 through 11 April 2002

ER -

Physical mechanisms of performance instabilities such as gate-lag and kink phenomena in GaAs MESFETs

Abstract

Other

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this