Physical properties of bi4ti3o12films grown on si(100) wafers

Masaki Yamaguchi; Takao Nagatomo; Osamu Omoto

doi:10.1143/JJAP.34.5116

Physical properties of bi₄ti₃o₁₂films grown on si(100) wafers

Masaki Yamaguchi, Takao Nagatomo, Osamu Omoto

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Bismuth titanate (Bi₄Ti₃O₁₂) films were prepared on Si(100) wafers by rf planar magnetron sputtering using a target of Bi₂TiO₅ ceramic. C-axis-oriented Bi₄Ti₃O₁₂ films were grown on Si(100) at a low substrate temperature of 550ŶC. However, thesefilms did not exhibit ferroelectricity, and the dielectricconstant ॉ_rand dissipation factor tan ै were about 156 and 0.032, respectively. The dielectric constant was reduced with decreasing film thickness. This behavior was assuming supposing a low-dielectric-constant interface layer. These films showed the dielectric breakdown field of about 21ŠkV/cm.

Original language	English
Pages (from-to)	5116-5119
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	34
Issue number	9
DOIs	https://doi.org/10.1143/JJAP.34.5116
Publication status	Published - 1995 Sept

Keywords

BiTiO
C-axis orientation
Rf planar magnetron sputtering
Thickness dependance
Thin films

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.34.5116

Cite this

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title = "Physical properties of bi4ti3o12films grown on si(100) wafers",

abstract = "Bismuth titanate (Bi4Ti3O12) films were prepared on Si(100) wafers by rf planar magnetron sputtering using a target of Bi2TiO5 ceramic. C-axis-oriented Bi4Ti3O12 films were grown on Si(100) at a low substrate temperature of 550ŶC. However, thesefilms did not exhibit ferroelectricity, and the dielectricconstant ॉrand dissipation factor tan ै were about 156 and 0.032, respectively. The dielectric constant was reduced with decreasing film thickness. This behavior was assuming supposing a low-dielectric-constant interface layer. These films showed the dielectric breakdown field of about 21{\v S}kV/cm.",

keywords = "BiTiO, C-axis orientation, Rf planar magnetron sputtering, Thickness dependance, Thin films",

author = "Masaki Yamaguchi and Takao Nagatomo and Osamu Omoto",

year = "1995",

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pages = "5116--5119",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

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T1 - Physical properties of bi4ti3o12films grown on si(100) wafers

AU - Yamaguchi, Masaki

AU - Nagatomo, Takao

AU - Omoto, Osamu

PY - 1995/9

Y1 - 1995/9

N2 - Bismuth titanate (Bi4Ti3O12) films were prepared on Si(100) wafers by rf planar magnetron sputtering using a target of Bi2TiO5 ceramic. C-axis-oriented Bi4Ti3O12 films were grown on Si(100) at a low substrate temperature of 550ŶC. However, thesefilms did not exhibit ferroelectricity, and the dielectricconstant ॉrand dissipation factor tan ै were about 156 and 0.032, respectively. The dielectric constant was reduced with decreasing film thickness. This behavior was assuming supposing a low-dielectric-constant interface layer. These films showed the dielectric breakdown field of about 21ŠkV/cm.

AB - Bismuth titanate (Bi4Ti3O12) films were prepared on Si(100) wafers by rf planar magnetron sputtering using a target of Bi2TiO5 ceramic. C-axis-oriented Bi4Ti3O12 films were grown on Si(100) at a low substrate temperature of 550ŶC. However, thesefilms did not exhibit ferroelectricity, and the dielectricconstant ॉrand dissipation factor tan ै were about 156 and 0.032, respectively. The dielectric constant was reduced with decreasing film thickness. This behavior was assuming supposing a low-dielectric-constant interface layer. These films showed the dielectric breakdown field of about 21ŠkV/cm.

KW - BiTiO

KW - C-axis orientation

KW - Rf planar magnetron sputtering

KW - Thickness dependance

KW - Thin films

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