Physical properties of MOD derived Bi4Ti3O12/Bi2SiO5/Si structures

M. Yamaguchi; T. Nagatomo; Y. Masuda

Physical properties of MOD derived Bi₄Ti₃O₁₂/Bi₂SiO₅/Si structures

M. Yamaguchi, T. Nagatomo, Y. Masuda

Research output: Contribution to conference › Paper › peer-review

Abstract

Bismuth titanate (Bi₄Ti₃O₁₂) thin films were fabricated on (100)-oriented silicon substrates with bismuth silicate (Bi₂SiO₅) buffer layer by metal organic decomposition (MOD) method. It was confirmed that the resultant films were single-phase Bi₄Ti₃O₁₂ with c-axis dominant orientation. Thickness of Bi₄Ti₃O₁₂ and Bi₂SiO₅ layer were approximately 50 nm and 5 nm, respectively. The fabricated metal-ferroelectric-insulator-semiconductor (MFIS) structures, have relatively superior leakage current density of approximately 10^-9 A cm^-2 and high break-down applied voltage of approximately 10 V. From the above result, it is confirmed that the crystallinity and surface morphology of Bi₄Ti₃O₁₂ thin films are greatly dependent on the existence of a Bi₄SiO₅ layer. Therefore, we consider that the Bi₄Ti₃O₁₂ thin film characteristics may be improved by Bi₂SiO₅ buffer layer.

Original language	English
Pages	231-234
Number of pages	4
Publication status	Published - 2002
Event	Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics - Nara, Japan Duration: 2002 May 28 → 2002 Jun 1

Conference

Conference	Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics
Country/Territory	Japan
City	Nara
Period	02/5/28 → 02/6/1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

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title = "Physical properties of MOD derived Bi4Ti3O12/Bi2SiO5/Si structures",

abstract = "Bismuth titanate (Bi4Ti3O12) thin films were fabricated on (100)-oriented silicon substrates with bismuth silicate (Bi2SiO5) buffer layer by metal organic decomposition (MOD) method. It was confirmed that the resultant films were single-phase Bi4Ti3O12 with c-axis dominant orientation. Thickness of Bi4Ti3O12 and Bi2SiO5 layer were approximately 50 nm and 5 nm, respectively. The fabricated metal-ferroelectric-insulator-semiconductor (MFIS) structures, have relatively superior leakage current density of approximately 10-9 A cm-2 and high break-down applied voltage of approximately 10 V. From the above result, it is confirmed that the crystallinity and surface morphology of Bi4Ti3O12 thin films are greatly dependent on the existence of a Bi4SiO5 layer. Therefore, we consider that the Bi4Ti3O12 thin film characteristics may be improved by Bi2SiO5 buffer layer.",

author = "M. Yamaguchi and T. Nagatomo and Y. Masuda",

year = "2002",

language = "English",

pages = "231--234",

note = "Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics ; Conference date: 28-05-2002 Through 01-06-2002",

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TY - CONF

T1 - Physical properties of MOD derived Bi4Ti3O12/Bi2SiO5/Si structures

AU - Yamaguchi, M.

AU - Nagatomo, T.

AU - Masuda, Y.

PY - 2002

Y1 - 2002

N2 - Bismuth titanate (Bi4Ti3O12) thin films were fabricated on (100)-oriented silicon substrates with bismuth silicate (Bi2SiO5) buffer layer by metal organic decomposition (MOD) method. It was confirmed that the resultant films were single-phase Bi4Ti3O12 with c-axis dominant orientation. Thickness of Bi4Ti3O12 and Bi2SiO5 layer were approximately 50 nm and 5 nm, respectively. The fabricated metal-ferroelectric-insulator-semiconductor (MFIS) structures, have relatively superior leakage current density of approximately 10-9 A cm-2 and high break-down applied voltage of approximately 10 V. From the above result, it is confirmed that the crystallinity and surface morphology of Bi4Ti3O12 thin films are greatly dependent on the existence of a Bi4SiO5 layer. Therefore, we consider that the Bi4Ti3O12 thin film characteristics may be improved by Bi2SiO5 buffer layer.

AB - Bismuth titanate (Bi4Ti3O12) thin films were fabricated on (100)-oriented silicon substrates with bismuth silicate (Bi2SiO5) buffer layer by metal organic decomposition (MOD) method. It was confirmed that the resultant films were single-phase Bi4Ti3O12 with c-axis dominant orientation. Thickness of Bi4Ti3O12 and Bi2SiO5 layer were approximately 50 nm and 5 nm, respectively. The fabricated metal-ferroelectric-insulator-semiconductor (MFIS) structures, have relatively superior leakage current density of approximately 10-9 A cm-2 and high break-down applied voltage of approximately 10 V. From the above result, it is confirmed that the crystallinity and surface morphology of Bi4Ti3O12 thin films are greatly dependent on the existence of a Bi4SiO5 layer. Therefore, we consider that the Bi4Ti3O12 thin film characteristics may be improved by Bi2SiO5 buffer layer.

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M3 - Paper

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T2 - Proceedings of the 13th IEEE International Symposium on Applications of Ferroelectronics

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ER -

Physical properties of MOD derived Bi₄Ti₃O₁₂/Bi₂SiO₅/Si structures

Abstract

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