TY - GEN
T1 - Physical simulation and visualization of the Marangoni convection inside meniscus region under IPA vapor in wafer drying process
AU - Ono, N.
AU - Yamada, T.
AU - Miura, S.
AU - Ishibashi, T.
AU - Matsuo, H.
AU - Watanabe, K.
N1 - Publisher Copyright:
© The Electrochemical Society.
PY - 2019
Y1 - 2019
N2 - In cleaning and drying processes after chemical mechanical polishing process, there is a method of flowing pure water to a rotating wafer, and simultaneously supplying IPA (Iso-Propyl Alcohol) vapor to the meniscus region (this is known as Rotagoni drying). This method causes a surface tension difference on the liquid surface and then drives fluid convection by the Marangoni effect, which is thought to efficiently remove impure particles on the wafer surface. During the impingement of IPA vapor to the meniscus region, in-situ observation of Marangoni convection is technically difficult. In this study, physical simulation by creating a simplified two-dimensional flow was performed. Using MEMS device technique, a two-dimensional flow channel was created, and pure water and IPA vapor was supplied to reproduce the situation, and the flow was visualized by utilizing PIV (Particle Image Velocimetry) method. The flow velocities and the flow patterns were successfully obtained from the image analysis. The surface flow with IPA vapor was in the reversed direction of that with only nitrogen gas, and the velocity became larger.
AB - In cleaning and drying processes after chemical mechanical polishing process, there is a method of flowing pure water to a rotating wafer, and simultaneously supplying IPA (Iso-Propyl Alcohol) vapor to the meniscus region (this is known as Rotagoni drying). This method causes a surface tension difference on the liquid surface and then drives fluid convection by the Marangoni effect, which is thought to efficiently remove impure particles on the wafer surface. During the impingement of IPA vapor to the meniscus region, in-situ observation of Marangoni convection is technically difficult. In this study, physical simulation by creating a simplified two-dimensional flow was performed. Using MEMS device technique, a two-dimensional flow channel was created, and pure water and IPA vapor was supplied to reproduce the situation, and the flow was visualized by utilizing PIV (Particle Image Velocimetry) method. The flow velocities and the flow patterns were successfully obtained from the image analysis. The surface flow with IPA vapor was in the reversed direction of that with only nitrogen gas, and the velocity became larger.
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UR - http://www.scopus.com/inward/citedby.url?scp=85077116354&partnerID=8YFLogxK
U2 - 10.1149/09202.0107ecst
DO - 10.1149/09202.0107ecst
M3 - Conference contribution
AN - SCOPUS:85077116354
SN - 9781607688761
T3 - ECS Transactions
SP - 107
EP - 116
BT - 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019
A2 - Saga, Koichiro
A2 - Mertens, Paul W.
A2 - Hattori, Takeshi
A2 - Ruzyllo, Jerzy
A2 - Muscat, Anthony J.
PB - Electrochemical Society Inc.
T2 - 16th International Symposium on Semiconductor Cleaning Science and Technology, SCST 2019 - 236th ECS Meeting
Y2 - 13 October 2019 through 17 October 2019
ER -