Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs

Hiraku Onodera; Kazushige Horio

Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs

Hiraku Onodera, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We perform two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN HEMTs with a short gate length and a short gate-To-drain distance. It is shown that when an acceptor density in a buffer layer is high, the breakdown voltage is determined by impact ionization of carriers, and it can decrease with increasing the field-plate length. On the other hand, when the acceptor density is relatively low, the buffer leakage current becomes very large and it can determine the breakdown voltage, which becomes very low. In this case, the breakdown voltage increases with increasing the field-plate length.

Original language	English
Title of host publication	European Microwave Week 2012
Subtitle of host publication	"Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012
Pages	401-404
Number of pages	4
Publication status	Published - 2012 Dec 1
Event	7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012 - Amsterdam, Netherlands Duration: 2012 Oct 29 → 2012 Oct 30

Publication series

Name	European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012

Conference

Conference	7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012
Country/Territory	Netherlands
City	Amsterdam
Period	12/10/29 → 12/10/30

Keywords

GaN
HEMT
breakdown voltage
buffer leakage current
field plate
impact ionization of carriers

ASJC Scopus subject areas

Hardware and Architecture

Cite this

Onodera, H., & Horio, K. (2012). Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs. In European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012 (pp. 401-404). [6483821] (European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012).

Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs. / Onodera, Hiraku; Horio, Kazushige.

European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012. 2012. p. 401-404 6483821 (European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Onodera, H & Horio, K 2012, Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs. in European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012., 6483821, European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012, pp. 401-404, 7th European Microwave Integrated Circuits Conference, EuMIC 2012 - Held as Part of 15th European Microwave Week, EuMW 2012, Amsterdam, Netherlands, 12/10/29.

Onodera H, Horio K. Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs. In European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012. 2012. p. 401-404. 6483821. (European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012).

Onodera, Hiraku ; Horio, Kazushige. / Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs. European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012. 2012. pp. 401-404 (European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012).

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title = "Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs",

abstract = "We perform two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN HEMTs with a short gate length and a short gate-To-drain distance. It is shown that when an acceptor density in a buffer layer is high, the breakdown voltage is determined by impact ionization of carriers, and it can decrease with increasing the field-plate length. On the other hand, when the acceptor density is relatively low, the buffer leakage current becomes very large and it can determine the breakdown voltage, which becomes very low. In this case, the breakdown voltage increases with increasing the field-plate length.",

keywords = "GaN, HEMT, breakdown voltage, buffer leakage current, field plate, impact ionization of carriers",

author = "Hiraku Onodera and Kazushige Horio",

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N2 - We perform two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN HEMTs with a short gate length and a short gate-To-drain distance. It is shown that when an acceptor density in a buffer layer is high, the breakdown voltage is determined by impact ionization of carriers, and it can decrease with increasing the field-plate length. On the other hand, when the acceptor density is relatively low, the buffer leakage current becomes very large and it can determine the breakdown voltage, which becomes very low. In this case, the breakdown voltage increases with increasing the field-plate length.

AB - We perform two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN HEMTs with a short gate length and a short gate-To-drain distance. It is shown that when an acceptor density in a buffer layer is high, the breakdown voltage is determined by impact ionization of carriers, and it can decrease with increasing the field-plate length. On the other hand, when the acceptor density is relatively low, the buffer leakage current becomes very large and it can determine the breakdown voltage, which becomes very low. In this case, the breakdown voltage increases with increasing the field-plate length.

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KW - HEMT

KW - breakdown voltage

KW - buffer leakage current

KW - field plate

KW - impact ionization of carriers

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Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

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