Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs

T. Tanaka; K. Itagaki; A. Nakajima; K. Horio

Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs

T. Tanaka, K. Itagaki, A. Nakajima, K. Horio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Two-dimensional transient simulation of GaAs FETs with a field plate is performed in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects slow current transients and current slump due to substrate traps and surface states. It is shown that both the substrate-related and surface state-related transients and current slump are reduced by introducing a field plate. It is suggested that there are optimum values for field-plate length and insulator thickness under the field plate to reduce the current slump and also to maintain high frequency performance of GaAs FETs.

Original language	English
Title of host publication	European Microwave Week 2009, EuMW 2009
Subtitle of host publication	Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
Pages	164-167
Number of pages	4
Publication status	Published - 2009
Event	European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 - Rome, Italy Duration: 2009 Sept 28 → 2009 Oct 2

Publication series

Name	European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Conference

Conference	European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009
Country/Territory	Italy
City	Rome
Period	09/9/28 → 09/10/2

ASJC Scopus subject areas

Computer Networks and Communications
Hardware and Architecture
Electrical and Electronic Engineering

Cite this

Tanaka, T., Itagaki, K., Nakajima, A., & Horio, K. (2009). Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs. In European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009 (pp. 164-167). [5296293] (European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009).

Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs. / Tanaka, T.; Itagaki, K.; Nakajima, A. et al.
European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009. 2009. p. 164-167 5296293 (European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tanaka, T, Itagaki, K, Nakajima, A & Horio, K 2009, Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs. in European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009., 5296293, European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009, pp. 164-167, European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies - 4th European Microwave Integrated Circuits Conference, EuMIC 2009, Rome, Italy, 09/9/28.

Tanaka T, Itagaki K, Nakajima A, Horio K. Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs. In European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009. 2009. p. 164-167. 5296293. (European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009).

Tanaka, T. ; Itagaki, K. ; Nakajima, A. et al. / Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs. European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009. 2009. pp. 164-167 (European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009).

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abstract = "Two-dimensional transient simulation of GaAs FETs with a field plate is performed in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects slow current transients and current slump due to substrate traps and surface states. It is shown that both the substrate-related and surface state-related transients and current slump are reduced by introducing a field plate. It is suggested that there are optimum values for field-plate length and insulator thickness under the field plate to reduce the current slump and also to maintain high frequency performance of GaAs FETs.",

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T1 - Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs

AU - Tanaka, T.

AU - Itagaki, K.

AU - Nakajima, A.

AU - Horio, K.

PY - 2009

Y1 - 2009

N2 - Two-dimensional transient simulation of GaAs FETs with a field plate is performed in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects slow current transients and current slump due to substrate traps and surface states. It is shown that both the substrate-related and surface state-related transients and current slump are reduced by introducing a field plate. It is suggested that there are optimum values for field-plate length and insulator thickness under the field plate to reduce the current slump and also to maintain high frequency performance of GaAs FETs.

AB - Two-dimensional transient simulation of GaAs FETs with a field plate is performed in which substrate traps and surface states are considered. Quasi-pulsed I-V curves are derived from the transient characteristics. It is studied how the existence of field plate affects slow current transients and current slump due to substrate traps and surface states. It is shown that both the substrate-related and surface state-related transients and current slump are reduced by introducing a field plate. It is suggested that there are optimum values for field-plate length and insulator thickness under the field plate to reduce the current slump and also to maintain high frequency performance of GaAs FETs.

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T3 - European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

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BT - European Microwave Week 2009, EuMW 2009

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Physics-based simulation of field-plate effects on substrate- and surface-related current slump in GaAs FETs

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