TY - JOUR
T1 - Plasma polymerization of silicon-containing monomers
AU - Talib, Zainal Abidin
AU - Kurosawa, Shigeru
AU - Atthoff, Björn
AU - Aizawa, Hidenobu
AU - Kashima, Kazuya
AU - Hirokawa, Tomoya
AU - Yoshimi, Yasuo
AU - Yoshimoto, Minoru
AU - Hirotsu, Toshihiro
AU - Miyake, Jun
AU - Hilborn, Jöns
PY - 2001
Y1 - 2001
N2 - Plasma depositions of ultra thin films from seven silicon-containing liquid monomers were investigated using a continuos wave (CW) plasma source. The deposition rate of plasma polymerized films were determined using a quartz crystal microbalance (QCM) technique while the film composition were determined spectroscopiclly using primarily X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared method (FT-IR). The wettability of the plasma-polymerized films was also investigated by measuring the contact angles of water on the film surfaces. It was observed that the C=C absorption band was not present in these films. This observation is consistent with selective polymerization through the double bond. Oxygen was present in all samples investigated and this may be attributed to the quenching of radicals in the film by reactions with oxygen when exposed to atmosphere.
AB - Plasma depositions of ultra thin films from seven silicon-containing liquid monomers were investigated using a continuos wave (CW) plasma source. The deposition rate of plasma polymerized films were determined using a quartz crystal microbalance (QCM) technique while the film composition were determined spectroscopiclly using primarily X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared method (FT-IR). The wettability of the plasma-polymerized films was also investigated by measuring the contact angles of water on the film surfaces. It was observed that the C=C absorption band was not present in these films. This observation is consistent with selective polymerization through the double bond. Oxygen was present in all samples investigated and this may be attributed to the quenching of radicals in the film by reactions with oxygen when exposed to atmosphere.
KW - Deposition rate
KW - Plasma polymerization
KW - Quartz crystal microbalance (QCM)
KW - Silicon-containing monomers
KW - XPS
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U2 - 10.2494/photopolymer.14.129
DO - 10.2494/photopolymer.14.129
M3 - Article
AN - SCOPUS:0035750996
SN - 0914-9244
VL - 14
SP - 129
EP - 138
JO - Journal of Photopolymer Science and Technology
JF - Journal of Photopolymer Science and Technology
IS - 1
ER -