Power Optimization Methodology for Ultralow Power Microcontroller with Silicon on Thin BOX MOSFET

Hayate Okuhara; Yu Fujita; Kimiyoshi Usami; Hideharu Amano

doi:10.1109/TVLSI.2016.2635675

Power Optimization Methodology for Ultralow Power Microcontroller with Silicon on Thin BOX MOSFET

Hayate Okuhara, Yu Fujita, Kimiyoshi Usami, Hideharu Amano

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

In this brief, a practical power optimization method that calculates the optimal power supply and body bias voltages, for a given target operational frequency and a temperature, is proposed and evaluated. The proposed optimization method is based upon a simple power model in which several coefficients for leakage power, switching power, temperature, and operational frequency are obtained from accurate real chip measurements. The calculated optimal-voltage settings by the proposed model can achieve minimum accuracies of 93.8%, 91.6%, and 79.5% for room-temperature, 50 °C, and 65 °C, respectively. Since the proposed methodology is based on well-known power formulas, it can be applied to the latest FD-SOI technologies.

Original language	English
Article number	7802624
Pages (from-to)	1578-1582
Number of pages	5
Journal	IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume	25
Issue number	4
DOIs	https://doi.org/10.1109/TVLSI.2016.2635675
Publication status	Published - 2017 Apr

Keywords

Body bias control
FD-SOI
Silicon on thin BOX (SOTB)
power optimization
ultralow power design

ASJC Scopus subject areas

Software
Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/TVLSI.2016.2635675

Cite this

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title = "Power Optimization Methodology for Ultralow Power Microcontroller with Silicon on Thin BOX MOSFET",

abstract = "In this brief, a practical power optimization method that calculates the optimal power supply and body bias voltages, for a given target operational frequency and a temperature, is proposed and evaluated. The proposed optimization method is based upon a simple power model in which several coefficients for leakage power, switching power, temperature, and operational frequency are obtained from accurate real chip measurements. The calculated optimal-voltage settings by the proposed model can achieve minimum accuracies of 93.8%, 91.6%, and 79.5% for room-temperature, 50 °C, and 65 °C, respectively. Since the proposed methodology is based on well-known power formulas, it can be applied to the latest FD-SOI technologies.",

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author = "Hayate Okuhara and Yu Fujita and Kimiyoshi Usami and Hideharu Amano",

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AU - Okuhara, Hayate

AU - Fujita, Yu

AU - Usami, Kimiyoshi

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PY - 2017/4

Y1 - 2017/4

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AB - In this brief, a practical power optimization method that calculates the optimal power supply and body bias voltages, for a given target operational frequency and a temperature, is proposed and evaluated. The proposed optimization method is based upon a simple power model in which several coefficients for leakage power, switching power, temperature, and operational frequency are obtained from accurate real chip measurements. The calculated optimal-voltage settings by the proposed model can achieve minimum accuracies of 93.8%, 91.6%, and 79.5% for room-temperature, 50 °C, and 65 °C, respectively. Since the proposed methodology is based on well-known power formulas, it can be applied to the latest FD-SOI technologies.

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Power Optimization Methodology for Ultralow Power Microcontroller with Silicon on Thin BOX MOSFET

Abstract

Keywords

ASJC Scopus subject areas

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