Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates

Kazuyoshi Ueno; Hikaru Hida; Yumi Ogawa; Yasutoshi Tsukada; Tadatoshi Nozaki

doi:10.1109/IEDM.1988.32943

Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates

Kazuyoshi Ueno, Hikaru Hida, Yumi Ogawa, Yasutoshi Tsukada, Tadatoshi Nozaki

Research output: Contribution to journal › Conference article › peer-review

Abstract

Theoretical and experiement investigations based on crystallographic considerations were carried out to study the possibility of avoiding piezoelectric-charge-induced orientation effects. Piezoelectric-charge-induced threshold voltage (V_t) variations for different crystal orientations were estimated by calculating piezoelectric potentials using the effective piezoelectric constant tensor for an arbitrarily oriented FET. Comparison between theoretical prediction and experimental results was made for WSI_x-gate self-aligned GaAs MESFETs fabricated on (111)B, (110), and (100) substrates. No gate orientation effects were observed for 0.5-μm-gate FETs on (111)B substrates with high transconductance values, typically as high as 300 mS/mm (V_t = -0.65 V).

Original language	English
Pages (from-to)	846-849
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1988.32943
Publication status	Published - 1988 Dec 1
Event	Technical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA Duration: 1988 Dec 11 → 1988 Dec 14

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.1988.32943

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title = "Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates",

abstract = "Theoretical and experiement investigations based on crystallographic considerations were carried out to study the possibility of avoiding piezoelectric-charge-induced orientation effects. Piezoelectric-charge-induced threshold voltage (Vt) variations for different crystal orientations were estimated by calculating piezoelectric potentials using the effective piezoelectric constant tensor for an arbitrarily oriented FET. Comparison between theoretical prediction and experimental results was made for WSIx-gate self-aligned GaAs MESFETs fabricated on (111)B, (110), and (100) substrates. No gate orientation effects were observed for 0.5-μm-gate FETs on (111)B substrates with high transconductance values, typically as high as 300 mS/mm (Vt = -0.65 V).",

author = "Kazuyoshi Ueno and Hikaru Hida and Yumi Ogawa and Yasutoshi Tsukada and Tadatoshi Nozaki",

year = "1988",

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language = "English",

pages = "846--849",

journal = "Technical Digest - International Electron Devices Meeting",

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note = "Technical Digest - International Electron Devices Meeting 1988 ; Conference date: 11-12-1988 Through 14-12-1988",

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TY - JOUR

T1 - Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates

AU - Ueno, Kazuyoshi

AU - Hida, Hikaru

AU - Ogawa, Yumi

AU - Tsukada, Yasutoshi

AU - Nozaki, Tadatoshi

PY - 1988/12/1

Y1 - 1988/12/1

N2 - Theoretical and experiement investigations based on crystallographic considerations were carried out to study the possibility of avoiding piezoelectric-charge-induced orientation effects. Piezoelectric-charge-induced threshold voltage (Vt) variations for different crystal orientations were estimated by calculating piezoelectric potentials using the effective piezoelectric constant tensor for an arbitrarily oriented FET. Comparison between theoretical prediction and experimental results was made for WSIx-gate self-aligned GaAs MESFETs fabricated on (111)B, (110), and (100) substrates. No gate orientation effects were observed for 0.5-μm-gate FETs on (111)B substrates with high transconductance values, typically as high as 300 mS/mm (Vt = -0.65 V).

AB - Theoretical and experiement investigations based on crystallographic considerations were carried out to study the possibility of avoiding piezoelectric-charge-induced orientation effects. Piezoelectric-charge-induced threshold voltage (Vt) variations for different crystal orientations were estimated by calculating piezoelectric potentials using the effective piezoelectric constant tensor for an arbitrarily oriented FET. Comparison between theoretical prediction and experimental results was made for WSIx-gate self-aligned GaAs MESFETs fabricated on (111)B, (110), and (100) substrates. No gate orientation effects were observed for 0.5-μm-gate FETs on (111)B substrates with high transconductance values, typically as high as 300 mS/mm (Vt = -0.65 V).

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DO - 10.1109/IEDM.1988.32943

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SN - 0163-1918

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JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Technical Digest - International Electron Devices Meeting 1988

Y2 - 11 December 1988 through 14 December 1988

ER -

Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates

Abstract

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