Prediction and verification of no gate orientation effects for GaAs MESFETs on (111) substrates

Kazuyoshi Ueno, Hikaru Hida, Yumi Ogawa, Yasutoshi Tsukada, Tadatoshi Nozaki

Research output: Contribution to journalConference articlepeer-review


Theoretical and experiement investigations based on crystallographic considerations were carried out to study the possibility of avoiding piezoelectric-charge-induced orientation effects. Piezoelectric-charge-induced threshold voltage (Vt) variations for different crystal orientations were estimated by calculating piezoelectric potentials using the effective piezoelectric constant tensor for an arbitrarily oriented FET. Comparison between theoretical prediction and experimental results was made for WSIx-gate self-aligned GaAs MESFETs fabricated on (111)B, (110), and (100) substrates. No gate orientation effects were observed for 0.5-μm-gate FETs on (111)B substrates with high transconductance values, typically as high as 300 mS/mm (Vt = -0.65 V).

Original languageEnglish
Pages (from-to)846-849
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1988 Dec 1
EventTechnical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
Duration: 1988 Dec 111988 Dec 14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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