Preparation and characterization of ferroelectric Bi4Ti3O12 thin films grown on (100)-oriented silicon wafers

Masaki Yamaguchi; Takao Nagatomo; Osamu Omoto

doi:10.1143/jjap.35.4984

Preparation and characterization of ferroelectric Bi₄Ti₃O₁₂ thin films grown on (100)-oriented silicon wafers

Masaki Yamaguchi, Takao Nagatomo, Osamu Omoto

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Ferroelectric bismuth titanate (Bi₄Ti₃O₁₂) thin films were prepared directly on (100) silicon substrate by rf planar magnetron sputtering using a Bi₂TiO₅ ceramic target. Highly c-axis-oriented films were obtained at a high deposition rate of about 17 nm/min. The deposited thin films, consisting of plate-like grains about 2 μm in diameter, were grown uniformly parallel to the substrate surface. The remanent polarization (P_r) and the coercive field (E_c) of this film at 50 Hz were estimated to be 0.8 μC/cm² and 20kV/cm, respectively.

Original language	English
Pages (from-to)	4984-4986
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	35
Issue number	9 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.35.4984
Publication status	Published - 1996 Sept

Keywords

Bismuth titanate
Ferroelectric thin film
High c-axis orientation
Silicon
Sputtering

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.35.4984

Cite this

Preparation and characterization of ferroelectric Bi₄Ti₃O₁₂ thin films grown on (100)-oriented silicon wafers. / Yamaguchi, Masaki; Nagatomo, Takao; Omoto, Osamu.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 9 SUPPL. B, 09.1996, p. 4984-4986.

Research output: Contribution to journal › Article › peer-review

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abstract = "Ferroelectric bismuth titanate (Bi4Ti3O12) thin films were prepared directly on (100) silicon substrate by rf planar magnetron sputtering using a Bi2TiO5 ceramic target. Highly c-axis-oriented films were obtained at a high deposition rate of about 17 nm/min. The deposited thin films, consisting of plate-like grains about 2 μm in diameter, were grown uniformly parallel to the substrate surface. The remanent polarization (Pr) and the coercive field (Ec) of this film at 50 Hz were estimated to be 0.8 μC/cm2 and 20kV/cm, respectively.",

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