Preparation and wear resistance of TiBC, TiBN, SiNx single layer film and TiBC-SiNx and TiBN-SiNx double layer film by thermal plasma CVD

Yusuke Fuji; Shiro Shimada; Hajime Kiyono

doi:10.2497/jjspm.54.287

Preparation and wear resistance of TiBC, TiBN, SiN_x single layer film and TiBC-SiN_x and TiBN-SiN_x double layer film by thermal plasma CVD

Yusuke Fuji, Shiro Shimada, Hajime Kiyono

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Monolithic (TiBC, TiBN, SiN_x) and double layered films (TiBC-SiN_x, TiBN-SiN_x) were deposited on Si wafers or WC-Co substrates at about 800°C from a hexamethyldisiloxane, titanium tetra-ethoxide or tri-ethoxy borate solution and their mixed solution by thermal plasma chemical vapor deposition. The films were characterized by thin film X-raydiffractmetry (XRD), X-ray photoelectron spectroscopy, scanning electron microscopy, EDS analysis and the cutting tests. XRD indicated that TiBC and TiBN phases were crystalline, but SiN_x was amorphous. Thickness of under-layered TiBC or TiBN and over-layered SiN_x in the double layered films was 0.5 and 2-4μm, respectively. The cutting tests for the double layered film deposited on WC-Co showed that the double layered TiBC-SiN_x and TiBN-SiN_x films possessed the good wear resistance comparable to or higher than the commercial TiN film deposited on WC-Co prepared by thermal CVD, in terms of crater and flank wear resistances.

Original language	English
Pages (from-to)	287-293
Number of pages	7
Journal	Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy
Volume	54
Issue number	4
DOIs	https://doi.org/10.2497/jjspm.54.287
Publication status	Published - 2007 Apr
Externally published	Yes

Keywords

Alkoxide solution
Plasma-enhanced chemical vapor deposition
Wear resistance

ASJC Scopus subject areas

Mechanical Engineering
Industrial and Manufacturing Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.2497/jjspm.54.287

Cite this

Preparation and wear resistance of TiBC, TiBN, SiN_x single layer film and TiBC-SiN_x and TiBN-SiN_x double layer film by thermal plasma CVD. / Fuji, Yusuke; Shimada, Shiro; Kiyono, Hajime.
In: Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy, Vol. 54, No. 4, 04.2007, p. 287-293.

Research output: Contribution to journal › Article › peer-review

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abstract = "Monolithic (TiBC, TiBN, SiNx) and double layered films (TiBC-SiNx, TiBN-SiNx) were deposited on Si wafers or WC-Co substrates at about 800°C from a hexamethyldisiloxane, titanium tetra-ethoxide or tri-ethoxy borate solution and their mixed solution by thermal plasma chemical vapor deposition. The films were characterized by thin film X-raydiffractmetry (XRD), X-ray photoelectron spectroscopy, scanning electron microscopy, EDS analysis and the cutting tests. XRD indicated that TiBC and TiBN phases were crystalline, but SiNx was amorphous. Thickness of under-layered TiBC or TiBN and over-layered SiNx in the double layered films was 0.5 and 2-4μm, respectively. The cutting tests for the double layered film deposited on WC-Co showed that the double layered TiBC-SiNx and TiBN-SiNx films possessed the good wear resistance comparable to or higher than the commercial TiN film deposited on WC-Co prepared by thermal CVD, in terms of crater and flank wear resistances.",

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N2 - Monolithic (TiBC, TiBN, SiNx) and double layered films (TiBC-SiNx, TiBN-SiNx) were deposited on Si wafers or WC-Co substrates at about 800°C from a hexamethyldisiloxane, titanium tetra-ethoxide or tri-ethoxy borate solution and their mixed solution by thermal plasma chemical vapor deposition. The films were characterized by thin film X-raydiffractmetry (XRD), X-ray photoelectron spectroscopy, scanning electron microscopy, EDS analysis and the cutting tests. XRD indicated that TiBC and TiBN phases were crystalline, but SiNx was amorphous. Thickness of under-layered TiBC or TiBN and over-layered SiNx in the double layered films was 0.5 and 2-4μm, respectively. The cutting tests for the double layered film deposited on WC-Co showed that the double layered TiBC-SiNx and TiBN-SiNx films possessed the good wear resistance comparable to or higher than the commercial TiN film deposited on WC-Co prepared by thermal CVD, in terms of crater and flank wear resistances.

AB - Monolithic (TiBC, TiBN, SiNx) and double layered films (TiBC-SiNx, TiBN-SiNx) were deposited on Si wafers or WC-Co substrates at about 800°C from a hexamethyldisiloxane, titanium tetra-ethoxide or tri-ethoxy borate solution and their mixed solution by thermal plasma chemical vapor deposition. The films were characterized by thin film X-raydiffractmetry (XRD), X-ray photoelectron spectroscopy, scanning electron microscopy, EDS analysis and the cutting tests. XRD indicated that TiBC and TiBN phases were crystalline, but SiNx was amorphous. Thickness of under-layered TiBC or TiBN and over-layered SiNx in the double layered films was 0.5 and 2-4μm, respectively. The cutting tests for the double layered film deposited on WC-Co showed that the double layered TiBC-SiNx and TiBN-SiNx films possessed the good wear resistance comparable to or higher than the commercial TiN film deposited on WC-Co prepared by thermal CVD, in terms of crater and flank wear resistances.

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