Preparation of Bi₄Ti₃O₁₂/Bi₂SiO₅ /Si structures derived by metal organic decomposition technique

Bismuth titanate (Bi₄Ti₃O¹²) thin films were fabricated on a bismuth silicate (Bi₂SiO₅)-coated silicon substrate by the metalorganic decomposition (MOD) method. It was confirmed that the resultant films were single-phase Bi₄Ti₃O₁₂ thin films with c-axis-dominant orientation. However, the fabricated films have a high leakage current density of approximately 10⁴ A·cm^-2. It is considered that this is mainly caused by the surface roughness due to the growth of plate-like grains. The growth of the Bi₄Ti₃O₁₂ thin films using the MOD method is influenced by the substrate. Therefore, it is regarded that the addition of Bi₂SiO₅ thin film improves the crystallinity of Bi₄Ti₃O₁₂ thin films.