Properties of Fluorinated Silicon Oxide Films Formed Using Fluorotriethoxysilane for Interlayer Dielectrics in Multilevel Interconnections.

T. Homma

Properties of Fluorinated Silicon Oxide Films Formed Using Fluorotriethoxysilane for Interlayer Dielectrics in Multilevel Interconnections.

Functional Control Systems

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1084-1087
Journal	Journal of the Electrochemical Society
Volume	143
Publication status	Published - 1996 Mar 1

Cite this

@article{d3f83f6641824c09a688c914ec0f38b7,

title = "Properties of Fluorinated Silicon Oxide Films Formed Using Fluorotriethoxysilane for Interlayer Dielectrics in Multilevel Interconnections.",

author = "T. Homma",

year = "1996",

month = mar,

day = "1",

language = "English",

volume = "143",

pages = "1084--1087",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

}