Pure dephasing induced by exciton-phonon interactions in narrow GaAs quantum wells

Xudong Fan, T. Takagahara, J. E. Cunningham, Hailin Wang

Research output: Contribution to journalArticlepeer-review

80 Citations (Scopus)


We investigate both dephasing and population relaxation of excitons localized in quantum dot like islands in narrow GaAs quantum wells by using stimulated photon echoes. A direct comparison of these two closely related decay processes reveals a pure dephasing contribution that dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing contribution arises from coupling of excitonic states with a continuum of acoustic phonons and is enhanced by 3D quantum confinement. Both the magnitude and the temperature dependence of the pure dephasing rate can be described by a theoretical model that generalizes the Huang-Rhys theory of F-centers.

Original languageEnglish
Pages (from-to)857-861
Number of pages5
JournalSolid State Communications
Issue number11
Publication statusPublished - 1998 Nov 13
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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