Pure dephasing induced by exciton-phonon interactions in narrow GaAs quantum wells

Xudong Fan; T. Takagahara; J. E. Cunningham; Hailin Wang

doi:10.1016/S0038-1098(98)00461-X

Pure dephasing induced by exciton-phonon interactions in narrow GaAs quantum wells

Xudong Fan, T. Takagahara, J. E. Cunningham, Hailin Wang

Research output: Contribution to journal › Article › peer-review

80 Citations (Scopus)

Abstract

We investigate both dephasing and population relaxation of excitons localized in quantum dot like islands in narrow GaAs quantum wells by using stimulated photon echoes. A direct comparison of these two closely related decay processes reveals a pure dephasing contribution that dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing contribution arises from coupling of excitonic states with a continuum of acoustic phonons and is enhanced by 3D quantum confinement. Both the magnitude and the temperature dependence of the pure dephasing rate can be described by a theoretical model that generalizes the Huang-Rhys theory of F-centers.

Original language	English
Pages (from-to)	857-861
Number of pages	5
Journal	Solid State Communications
Volume	108
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1098(98)00461-X
Publication status	Published - 1998 Nov 13
Externally published	Yes

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(98)00461-X

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title = "Pure dephasing induced by exciton-phonon interactions in narrow GaAs quantum wells",

abstract = "We investigate both dephasing and population relaxation of excitons localized in quantum dot like islands in narrow GaAs quantum wells by using stimulated photon echoes. A direct comparison of these two closely related decay processes reveals a pure dephasing contribution that dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing contribution arises from coupling of excitonic states with a continuum of acoustic phonons and is enhanced by 3D quantum confinement. Both the magnitude and the temperature dependence of the pure dephasing rate can be described by a theoretical model that generalizes the Huang-Rhys theory of F-centers.",

author = "Xudong Fan and T. Takagahara and Cunningham, {J. E.} and Hailin Wang",

note = "Funding Information: We thank D. Gammon for providing one of the samples used for this study and for many helpful and stimulating discussions. The work performed at the University of Oregon is supported by AFOSR and by a NSF career award.",

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T1 - Pure dephasing induced by exciton-phonon interactions in narrow GaAs quantum wells

AU - Fan, Xudong

AU - Takagahara, T.

AU - Cunningham, J. E.

AU - Wang, Hailin

N1 - Funding Information: We thank D. Gammon for providing one of the samples used for this study and for many helpful and stimulating discussions. The work performed at the University of Oregon is supported by AFOSR and by a NSF career award.

PY - 1998/11/13

Y1 - 1998/11/13

N2 - We investigate both dephasing and population relaxation of excitons localized in quantum dot like islands in narrow GaAs quantum wells by using stimulated photon echoes. A direct comparison of these two closely related decay processes reveals a pure dephasing contribution that dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing contribution arises from coupling of excitonic states with a continuum of acoustic phonons and is enhanced by 3D quantum confinement. Both the magnitude and the temperature dependence of the pure dephasing rate can be described by a theoretical model that generalizes the Huang-Rhys theory of F-centers.

AB - We investigate both dephasing and population relaxation of excitons localized in quantum dot like islands in narrow GaAs quantum wells by using stimulated photon echoes. A direct comparison of these two closely related decay processes reveals a pure dephasing contribution that dominates excitonic dephasing at elevated temperatures but does not involve exciton population relaxation. The pure dephasing contribution arises from coupling of excitonic states with a continuum of acoustic phonons and is enhanced by 3D quantum confinement. Both the magnitude and the temperature dependence of the pure dephasing rate can be described by a theoretical model that generalizes the Huang-Rhys theory of F-centers.

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Pure dephasing induced by exciton-phonon interactions in narrow GaAs quantum wells

Abstract

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