PZT-based high coupling with low permittivity thin films

Kiyotaka Wasa; Tomoaki Matsushima; Hideaki Adachi; Toshifumi Matsunaga; Masashi Suzuki; Takahiko Yanagitani; Takashi Yamamoto; Shinya Yoshida; Shuji Tanaka; S. Trolier-Mckinstry

doi:10.1109/ISAF.2013.6748700

PZT-based high coupling with low permittivity thin films

Kiyotaka Wasa, Tomoaki Matsushima, Hideaki Adachi, Toshifumi Matsunaga, Masashi Suzuki, Takahiko Yanagitani, Takashi Yamamoto, Shinya Yoshida, Shuji Tanaka, S. Trolier-Mckinstry

Research output: Contribution to conference › Paper › peer-review

Abstract

PZT-based piezoelectric thin films will make better piezoelectric devices including piezoelectric energy harvesting (EH) power MEMS, when the piezoelectric thin films show high electromechanical coupling and/or high piezoelectric constants with low permittivity. The piezoelectric thin films are mostly polycrystalline structure with high piezoelectric constants and high dielectric constants, i.e. ε*=300-1300 and e_31,f = -8 ∼ - 12C/m². Recently we have found thin films of single c-domain/single crystal PZT-based ternary perovskite, Pb(Mn,Nb)-PZT, exhibit exotic properties, i.e. high coupling and/or high piezoelectric constants with low dielectric constants opposed to the PZT-based thin films. The relative dielectric constants are as low as 100 with e_31,f = -12 C/m ². The low dielectric constants achieve high values of Figures of Merit for the EH-MEMS. This paper will discuss on the origin of the exotic dielectric and piezoelectric properties of the single c-domain/single crystal thin films in comparison with bulk PZT-based ceramics.

Original language	English
Pages	69-72
Number of pages	4
DOIs	https://doi.org/10.1109/ISAF.2013.6748700
Publication status	Published - 2013
Externally published	Yes
Event	2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013 - Prague 4, Czech Republic Duration: 2013 Jul 21 → 2013 Jul 25

Conference

Conference	2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013
Country/Territory	Czech Republic
City	Prague 4
Period	13/7/21 → 13/7/25

Keywords

PZT-based thin films
single crystal thin films
thin film piezoelectric Power MEMS

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ISAF.2013.6748700

Cite this

Wasa, K., Matsushima, T., Adachi, H., Matsunaga, T., Suzuki, M., Yanagitani, T., Yamamoto, T., Yoshida, S., Tanaka, S., & Trolier-Mckinstry, S. (2013). PZT-based high coupling with low permittivity thin films. 69-72. Paper presented at 2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013, Prague 4, Czech Republic. https://doi.org/10.1109/ISAF.2013.6748700

PZT-based high coupling with low permittivity thin films. / Wasa, Kiyotaka; Matsushima, Tomoaki; Adachi, Hideaki et al.

2013. 69-72 Paper presented at 2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013, Prague 4, Czech Republic.

Research output: Contribution to conference › Paper › peer-review

Wasa, K, Matsushima, T, Adachi, H, Matsunaga, T, Suzuki, M, Yanagitani, T, Yamamoto, T, Yoshida, S, Tanaka, S & Trolier-Mckinstry, S 2013, 'PZT-based high coupling with low permittivity thin films', Paper presented at 2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013, Prague 4, Czech Republic, 13/7/21 - 13/7/25 pp. 69-72. https://doi.org/10.1109/ISAF.2013.6748700

@conference{73dba26352034d189b76fcab748e2c54,

title = "PZT-based high coupling with low permittivity thin films",

abstract = "PZT-based piezoelectric thin films will make better piezoelectric devices including piezoelectric energy harvesting (EH) power MEMS, when the piezoelectric thin films show high electromechanical coupling and/or high piezoelectric constants with low permittivity. The piezoelectric thin films are mostly polycrystalline structure with high piezoelectric constants and high dielectric constants, i.e. ε*=300-1300 and e31,f = -8 ∼ - 12C/m2. Recently we have found thin films of single c-domain/single crystal PZT-based ternary perovskite, Pb(Mn,Nb)-PZT, exhibit exotic properties, i.e. high coupling and/or high piezoelectric constants with low dielectric constants opposed to the PZT-based thin films. The relative dielectric constants are as low as 100 with e31,f = -12 C/m 2. The low dielectric constants achieve high values of Figures of Merit for the EH-MEMS. This paper will discuss on the origin of the exotic dielectric and piezoelectric properties of the single c-domain/single crystal thin films in comparison with bulk PZT-based ceramics.",

keywords = "PZT-based thin films, single crystal thin films, thin film piezoelectric Power MEMS",

author = "Kiyotaka Wasa and Tomoaki Matsushima and Hideaki Adachi and Toshifumi Matsunaga and Masashi Suzuki and Takahiko Yanagitani and Takashi Yamamoto and Shinya Yoshida and Shuji Tanaka and S. Trolier-Mckinstry",

year = "2013",

doi = "10.1109/ISAF.2013.6748700",

language = "English",

pages = "69--72",

note = "2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013 ; Conference date: 21-07-2013 Through 25-07-2013",

}

TY - CONF

T1 - PZT-based high coupling with low permittivity thin films

AU - Wasa, Kiyotaka

AU - Matsushima, Tomoaki

AU - Adachi, Hideaki

AU - Matsunaga, Toshifumi

AU - Suzuki, Masashi

AU - Yanagitani, Takahiko

AU - Yamamoto, Takashi

AU - Yoshida, Shinya

AU - Tanaka, Shuji

AU - Trolier-Mckinstry, S.

PY - 2013

Y1 - 2013

N2 - PZT-based piezoelectric thin films will make better piezoelectric devices including piezoelectric energy harvesting (EH) power MEMS, when the piezoelectric thin films show high electromechanical coupling and/or high piezoelectric constants with low permittivity. The piezoelectric thin films are mostly polycrystalline structure with high piezoelectric constants and high dielectric constants, i.e. ε*=300-1300 and e31,f = -8 ∼ - 12C/m2. Recently we have found thin films of single c-domain/single crystal PZT-based ternary perovskite, Pb(Mn,Nb)-PZT, exhibit exotic properties, i.e. high coupling and/or high piezoelectric constants with low dielectric constants opposed to the PZT-based thin films. The relative dielectric constants are as low as 100 with e31,f = -12 C/m 2. The low dielectric constants achieve high values of Figures of Merit for the EH-MEMS. This paper will discuss on the origin of the exotic dielectric and piezoelectric properties of the single c-domain/single crystal thin films in comparison with bulk PZT-based ceramics.

AB - PZT-based piezoelectric thin films will make better piezoelectric devices including piezoelectric energy harvesting (EH) power MEMS, when the piezoelectric thin films show high electromechanical coupling and/or high piezoelectric constants with low permittivity. The piezoelectric thin films are mostly polycrystalline structure with high piezoelectric constants and high dielectric constants, i.e. ε*=300-1300 and e31,f = -8 ∼ - 12C/m2. Recently we have found thin films of single c-domain/single crystal PZT-based ternary perovskite, Pb(Mn,Nb)-PZT, exhibit exotic properties, i.e. high coupling and/or high piezoelectric constants with low dielectric constants opposed to the PZT-based thin films. The relative dielectric constants are as low as 100 with e31,f = -12 C/m 2. The low dielectric constants achieve high values of Figures of Merit for the EH-MEMS. This paper will discuss on the origin of the exotic dielectric and piezoelectric properties of the single c-domain/single crystal thin films in comparison with bulk PZT-based ceramics.

KW - PZT-based thin films

KW - single crystal thin films

KW - thin film piezoelectric Power MEMS

UR - http://www.scopus.com/inward/record.url?scp=84896360314&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896360314&partnerID=8YFLogxK

U2 - 10.1109/ISAF.2013.6748700

DO - 10.1109/ISAF.2013.6748700

M3 - Paper

AN - SCOPUS:84896360314

SP - 69

EP - 72

T2 - 2013 Joint IEEE International Symposium on Applications of Ferroelectric and Workshop on Piezoresponse Force Microscopy, ISAF/PFM 2013

Y2 - 21 July 2013 through 25 July 2013

ER -

PZT-based high coupling with low permittivity thin films

Abstract

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this