Re-Examination on the Universality of Si-MOS Inversion Layer Mobility

H. Irie, K. Kita, K. Kyuno, S. Takagi, K. Takasaki, M. Kubota, S. Saito, S. Nishikawa, A. Toriumi

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)716-717
JournalExtended Abstracts of 2003 International Conference on Solid State Devices and Materials (SSDM)
Publication statusPublished - 2003 Sept 1

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