Abstract
This paper reports a systematic re-investigation of the universality of MOS inversion layer mobility through a careful measurement. We demonstrate for the first time that the definition of the effective normal field for characterizing the universality is variable with the normal electric field, temperature, and substrate doping concentration. In addition, we propose that another new scattering mechanism should be involved to explain the mobility behavior around 100K.
| Original language | English |
|---|---|
| Pages (from-to) | 459-462 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 2003 Dec 1 |
| Externally published | Yes |
| Event | IEEE International Electron Devices Meeting - Washington, DC, United States Duration: 2003 Dec 8 → 2003 Dec 10 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry