Abstract
A variation in the reactive ion etch (RIE) rate of silicon oxynitride (SiOxNy) films deposited by plasma-enhanced chemical vapor deposition was studied by CHF3 RIE, CHF3 + carbon mono-oxide (CO) RIE and CF4 RIE. The source gas flow rate ratio (R = N2O/SiH4) during the SiOxNy film deposition was varied to obtain a film of different atomic composition. Etch rates decreased in the order of CF4 RIE, CHF3 RIE, and CHF3 + CO RIE, and the etch selectivity of SiO2 over SiOxNy increased in the same order also. The fluorocarbon (CFx) film deposited during a RIE process was analyzed by x-ray photoelectron spectroscopy measurements. Etch rates are found to be correlated to both thickness and atomic composition of the CFx film. Carbon-rich fluorocarbon films are found to be more resistive against RIE.
| Original language | English |
|---|---|
| Pages (from-to) | 1447-1450 |
| Number of pages | 4 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 13 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1995 Jul |
| Externally published | Yes |
| Event | Proceedings of the 22nd Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-22) - Scottsdale, AZ, USA Duration: 1995 Jan 8 → 1995 Jan 12 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering