Reactive ion etching of silicon oxynitride formed by plasma-enhanced chemical vapor deposition

Kazuyoshi Ueno, Takamaro Kikkawa, Ken Tokashiki

Research output: Contribution to journalConference articlepeer-review

17 Citations (Scopus)


A variation in the reactive ion etch (RIE) rate of silicon oxynitride (SiOxNy) films deposited by plasma-enhanced chemical vapor deposition was studied by CHF3 RIE, CHF3 + carbon mono-oxide (CO) RIE and CF4 RIE. The source gas flow rate ratio (R = N2O/SiH4) during the SiOxNy film deposition was varied to obtain a film of different atomic composition. Etch rates decreased in the order of CF4 RIE, CHF3 RIE, and CHF3 + CO RIE, and the etch selectivity of SiO2 over SiOxNy increased in the same order also. The fluorocarbon (CFx) film deposited during a RIE process was analyzed by x-ray photoelectron spectroscopy measurements. Etch rates are found to be correlated to both thickness and atomic composition of the CFx film. Carbon-rich fluorocarbon films are found to be more resistive against RIE.

Original languageEnglish
Pages (from-to)1447-1450
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
Publication statusPublished - 1995 Jul
Externally publishedYes
EventProceedings of the 22nd Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-22) - Scottsdale, AZ, USA
Duration: 1995 Jan 81995 Jan 12

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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