TY - JOUR
T1 - Realizing High Thermoelectric Performance at Ambient Temperature by Ternary Alloying in Polycrystalline Si1-x-yGexSny Thin Films with Boron Ion Implantation
AU - Peng, Ying
AU - Miao, Lei
AU - Gao, Jie
AU - Liu, Chengyan
AU - Kurosawa, Masashi
AU - Nakatsuka, Osamu
AU - Zaima, Shigeaki
N1 - Funding Information:
This work was partly supported by PRESTO (Grant No. JPMJPR15R2) and CREST (Grant No. JPMJCR19Q5) from the JST in Japan, a research grant (Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development) from the MEXT in Japan, the National Natural Science Foundation of China (Grant Nos 51572049 and 51602068), and the Guangxi Natural Science Foundation of China (Grant No. 2015GXNSFFA139002). Thanks for the thermal conductivity measurement and discussion from Prof. Tsunehiro Takeuchi in Toyota Technological Institute, Japan.
Publisher Copyright:
© 2019, The Author(s).
PY - 2019/12/1
Y1 - 2019/12/1
N2 - The interest in thermoelectrics (TE) for an electrical output power by converting any kind of heat has flourished in recent years, but questions about the efficiency at the ambient temperature and safety remain unanswered. With the possibility of integration in the technology of semiconductors based on silicon, highly harvested power density, abundant on earth, nontoxicity, and cost-efficiency, Si1-x-yGexSny ternary alloy film has been investigated to highlight its efficiency through ion implantation and high-temperature rapid thermal annealing (RTA) process. Significant improvement of the ambient-temperature TE performance has been achieved in a boron-implanted Si0.864Ge0.108Sn0.028 thin film after a short time RTA process at 1100 °C for 15 seconds, the power factor achieves to 11.3 μWcm−1 K−2 at room temperature. The introduction of Sn into Si1-xGex dose not only significantly improve the conductivity of Si1-xGex thermoelectric materials but also achieves a relatively high Seebeck coefficient at room temperature. This work manifests emerging opportunities for modulation Si integration thermoelectrics as wearable devices charger by body temperature.
AB - The interest in thermoelectrics (TE) for an electrical output power by converting any kind of heat has flourished in recent years, but questions about the efficiency at the ambient temperature and safety remain unanswered. With the possibility of integration in the technology of semiconductors based on silicon, highly harvested power density, abundant on earth, nontoxicity, and cost-efficiency, Si1-x-yGexSny ternary alloy film has been investigated to highlight its efficiency through ion implantation and high-temperature rapid thermal annealing (RTA) process. Significant improvement of the ambient-temperature TE performance has been achieved in a boron-implanted Si0.864Ge0.108Sn0.028 thin film after a short time RTA process at 1100 °C for 15 seconds, the power factor achieves to 11.3 μWcm−1 K−2 at room temperature. The introduction of Sn into Si1-xGex dose not only significantly improve the conductivity of Si1-xGex thermoelectric materials but also achieves a relatively high Seebeck coefficient at room temperature. This work manifests emerging opportunities for modulation Si integration thermoelectrics as wearable devices charger by body temperature.
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U2 - 10.1038/s41598-019-50754-4
DO - 10.1038/s41598-019-50754-4
M3 - Article
C2 - 31586102
AN - SCOPUS:85072924931
SN - 2045-2322
VL - 9
JO - Scientific Reports
JF - Scientific Reports
IS - 1
M1 - 14342
ER -