Recessed gate AlGaN/GaN MODFET on sapphire grown by MOCVD

Engineering & Materials Science

• Carrier concentration 29%
• Drain current 26%
• Gates (transistor) 29%
• Heterojunctions 27%
• High electron mobility transistors 71%
• Metallorganic chemical vapor deposition 97%
• Sapphire 82%
• Substrates 29%
• Temperature 24%
• Threshold voltage 22%
• Transconductance 49%
• Two dimensional electron gas 72%

Chemical Compounds

• Compound Mobility 15%
• Drain Current 31%
• Field Effect 61%
• Length 12%
• Metallorganic Chemical Vapour Deposition 100%
• Transconductance 63%
• Two-Dimensional Electron Gas 36%
• Voltage 14%

Physics & Astronomy

• alternating current 18%
• electron gas 19%
• field effect transistors 48%
• modulation 41%
• sapphire 52%
• temperature 6%
• temperature dependence 13%
• threshold voltage 19%
• transconductance 45%
• vapor deposition 47%