@inproceedings{004f029c355041a199614ca0c54d6613,
title = "Reduction in lags and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer",
abstract = "We make a two-dimensional transient analysis of fieldplate AlGaN/GaN HEMTs with a semi-insulating buffer layer, where a deep acceptor above the midgap is considered. It is studied how the deep-acceptor density NDA and the field plate affect buffer-related lag phenomena and current collapse. NDA is varied between 1017 cm-3 and 8×1017 cm-3. It is shown that without a field plate the drain lag and current collapse increase with increasing NDA as expected, although the gate lag decreases when NDA becomes higher than 2×1017 cm-3. But with a field plate, surprisingly, the lags and current collapse decrease when NDA becomes high. This is attributed to the fact that the reduction in drain lag and current collapse by introducing a field plate becomes more significant when NDA becomes higher.",
keywords = "Current collapse, Deep acceptor, Field plate, GaN, HEMT",
author = "Y. Saito and R. Tsurumaki and N. Noda and K. Horio",
year = "2017",
month = jan,
day = "1",
language = "English",
series = "Advanced Materials - TechConnect Briefs 2017",
publisher = "TechConnect",
pages = "27--30",
editor = "Fiona Case and Matthew Laudon and Bart Romanowicz and Fiona Case",
booktitle = "Informatics, Electronics and Microsystems - TechConnect Briefs 2017",
note = "11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference ; Conference date: 14-05-2017 Through 17-05-2017",
}