@inproceedings{79d1d2f1a56a40e4a6ed8548ab273b73,
title = "Removal of surface-related current slump in field-plate GaAs FETs",
abstract = "Two-dimensional transient analysis of field-plate GaAs MESFETs is performed in which surface states are considered. Quasi-pulsed current-voltage curves are derived from the transient characteristics. It is shown that the drain lag and current slump due to surface states can be reduced by introducing a field plate because fixed potential at the field plate leads to reducing trapping effects by the surface states. The dependence of lag phenomena and current slump on fieldplate length and SiO2 passivation layer thickness is also studied, indicating that the lags and current slump can be completely removed in some cases.",
keywords = "Current slump, Drain lag, Field plate, GaAs FET, Gate lag, Surface state",
author = "F. Hafiz and M. Kumeno and T. Tanaka and K. Horio",
year = "2012",
month = dec,
day = "1",
language = "English",
isbn = "1893580199",
series = "2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012",
booktitle = "2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012",
note = "27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 ; Conference date: 23-04-2012 Through 26-04-2012",
}