@inproceedings{8259a3e3cbda42eead98d67479d4cfd8,
title = "Resistance to active oxidation of Sol-Gel HfO2 coated SiC polycrystal",
abstract = "Sintered SiC substrate was coated with HfO2 by a sol-gel process using Hf(OEt)4, diethanol-amine, and ethanol. The HfO 2-coated SiC specimen was oxidized isothermally in high purity Ar gas flow at 1873 K for 36 ks and the weight change was monitored by an electro-microbalance. The weight of the un-coated SiC specimen decreased significantly due to the active oxidation, while the weight losses of HfO 2-coated SiC specimens after the isothermal oxidation for 36 ks were smaller than that of un-coated specimen. TEM image of HfO2-coated SiC specimen after oxidation depicted that thick SiO2 layer (∼800 nm) with a small amount of Hf elements formed on the surface of the specimen. XRD analysis indicated that HfC formed during the isothermal oxidation of HfO2-coated SiC specimen.",
author = "T. Akashi and M. Kasajima and H. Kiyono",
year = "2009",
doi = "10.1149/1.3224755",
language = "English",
isbn = "9781615676392",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "44",
pages = "185--190",
booktitle = "ECS Transactions - High Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting",
edition = "44",
note = "High Temperature Corrosion and Materials Chemistry 7 - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",
}