TY - JOUR
T1 - Role of knock-on in electron beam induced etching of diamond
AU - Fronzi, Marco
AU - Bishop, James
AU - Martin, Aiden A.
AU - Assadi, M. H.N.
AU - Regan, Blake
AU - Stampfl, Catherine
AU - Aharonovich, Igor
AU - Ford, Michael J.
AU - Toth, Milos
N1 - Funding Information:
The authors gratefully acknowledge the financial support of the National Natural Science Foundation of China (No. 51323011), and the Australian Government through the Australian Research Council (ARC DP160101301, DP180100077, DP190101058, LP170100150). Theoretical calculations were undertaken with the assistance of resources from the National Computational Infrastructure (NCI), which is supported by the Australian Government, and resources provided by the Pawsey Supercomputing Centre with funding from the Australian Government and the Government of Western Australia. MF and JB contributed equally to this work.
Funding Information:
The authors gratefully acknowledge the financial support of the National Natural Science Foundation of China (No. 51323011 ), and the Australian Government through the Australian Research Council ( ARC DP160101301 , DP180100077 , DP190101058 , LP170100150 ). Theoretical calculations were undertaken with the assistance of resources from the National Computational Infrastructure ( NCI ), which is supported by the Australian Government , and resources provided by the Pawsey Supercomputing Centre with funding from the Australian Government and the Government of Western Australia . MF and JB contributed equally to this work.
Publisher Copyright:
© 2020 Elsevier Ltd
PY - 2020/8/30
Y1 - 2020/8/30
N2 - Electron beam induced etching (EBIE) has recently emerged as a promising direct-write nanofabrication technique. EBIE is typically assumed to proceed entirely through chemical pathways driven by electron-electron interactions. Here we show that knock-on (i.e., momentum transfer from electrons to nuclei) can play a significant role in EBIE, even at electron beam energies as low as 1.5 keV. Specifically, we calculate knock-on cross-sections for H, D, O and CO on the surface of diamond and show experimentally that they affect the kinetics of EBIE performed using oxygen, hydrogen and deuterium etch precursors. Our results advance basic understanding of electron-adsorbate interactions, particularly in relation to EBIE and the related techniques of electron beam-induced deposition and surface functionalisation.
AB - Electron beam induced etching (EBIE) has recently emerged as a promising direct-write nanofabrication technique. EBIE is typically assumed to proceed entirely through chemical pathways driven by electron-electron interactions. Here we show that knock-on (i.e., momentum transfer from electrons to nuclei) can play a significant role in EBIE, even at electron beam energies as low as 1.5 keV. Specifically, we calculate knock-on cross-sections for H, D, O and CO on the surface of diamond and show experimentally that they affect the kinetics of EBIE performed using oxygen, hydrogen and deuterium etch precursors. Our results advance basic understanding of electron-adsorbate interactions, particularly in relation to EBIE and the related techniques of electron beam-induced deposition and surface functionalisation.
UR - http://www.scopus.com/inward/record.url?scp=85082674896&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85082674896&partnerID=8YFLogxK
U2 - 10.1016/j.carbon.2020.03.039
DO - 10.1016/j.carbon.2020.03.039
M3 - Article
AN - SCOPUS:85082674896
SN - 0008-6223
VL - 164
SP - 51
EP - 58
JO - Carbon
JF - Carbon
ER -