TY - GEN
T1 - Room temperature terahertz emission via intracenter transition in semiconductors
AU - Dezaki, Hikari
AU - Jing, Menglong
AU - Balasekaran, Sundararajan
AU - Tanabe, Tadao
AU - Oyama, Yutaka
PY - 2012
Y1 - 2012
N2 - An efficient continuous wave (CW) THz source working at nominal room temperature is described. Optically pumped room temperature THz emission is observed from various kinds of semiconductor bulk crystals. In order to investigate the emission mechanism, temperature dependences of terahertz emission intensity in various semiconductors are measured. Semiconductor samples used are InSb, InSb: Ge, InAs, GaSb, Ge, and Si. From these results, it is shown that the temperature dependences of emission characteristics are different between direct and indirect transition semiconductors, and that the high resistive Ge is suitable for room temperature THz emitter via intracenter transitions excited by IR pump lasers.
AB - An efficient continuous wave (CW) THz source working at nominal room temperature is described. Optically pumped room temperature THz emission is observed from various kinds of semiconductor bulk crystals. In order to investigate the emission mechanism, temperature dependences of terahertz emission intensity in various semiconductors are measured. Semiconductor samples used are InSb, InSb: Ge, InAs, GaSb, Ge, and Si. From these results, it is shown that the temperature dependences of emission characteristics are different between direct and indirect transition semiconductors, and that the high resistive Ge is suitable for room temperature THz emitter via intracenter transitions excited by IR pump lasers.
KW - Intracenter transition
KW - Shallow level
KW - Terahertz wave
UR - http://www.scopus.com/inward/record.url?scp=84857167269&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84857167269&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.500.66
DO - 10.4028/www.scientific.net/KEM.500.66
M3 - Conference contribution
AN - SCOPUS:84857167269
SN - 9783037852736
T3 - Key Engineering Materials
SP - 66
EP - 69
BT - Advanced Materials in Microwaves and Optics, AMMO2011
PB - Trans Tech Publications Ltd
T2 - 2011 International Conference on Advanced Materials in Microwaves and Optics, AMMO2011
Y2 - 30 September 2011 through 1 October 2011
ER -