Schottky contacts of Ni/Au on n-GaN grown on sapphire and SiC substrates

B. J. Zhang, G. Y. Zhao, N. Nishikawa, M. Adachi, H. Ishikawa, T. Egawa, T. Jimbo, M. Umeno

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	P88 (2008)-103
Journal	SiC及び関連ワイドバンドギャップ半導体研究会　第9回講演会予稿集
Publication status	Published - 2000 Dec 1

Cite this

@article{432ff0f11e8b419eb776d60ea7abeb6a,

title = "Schottky contacts of Ni/Au on n-GaN grown on sapphire and SiC substrates",

author = "Zhang, {B. J.} and Zhao, {G. Y.} and N. Nishikawa and M. Adachi and H. Ishikawa and T. Egawa and T. Jimbo and M. Umeno",

year = "2000",

month = dec,

day = "1",

language = "English",

pages = "P88 (2008)--103",

journal = "SiC及び関連ワイドバンドギャップ半導体研究会　第9回講演会予稿集",

}

TY - JOUR

T1 - Schottky contacts of Ni/Au on n-GaN grown on sapphire and SiC substrates

AU - Zhang, B. J.

AU - Zhao, G. Y.

AU - Nishikawa, N.

AU - Adachi, M.

AU - Ishikawa, H.

AU - Egawa, T.

AU - Jimbo, T.

AU - Umeno, M.

PY - 2000/12/1

Y1 - 2000/12/1

M3 - Article

SP - P88 (2008)-103

JO - SiC及び関連ワイドバンドギャップ半導体研究会　第9回講演会予稿集

JF - SiC及び関連ワイドバンドギャップ半導体研究会　第9回講演会予稿集

ER -