Selective oxidation for enhancement of magneto-optic effect in optical isolator with semiconductor guiding layer

H. Yokoi; T. Mizumoto; H. Masaki; N. Futakuchi; T. Ohtsuka; Y. Nakano

doi:10.1049/el:20010145

Selective oxidation for enhancement of magneto-optic effect in optical isolator with semiconductor guiding layer

H. Yokoi, T. Mizumoto, H. Masaki, N. Futakuchi, T. Ohtsuka, Y. Nakano

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Selective oxidation of an AlInAs layer grown on an InP substrate is studied with a view to enhancing the magneto-optic effect in an optical isolator with a semiconductor guiding layer. The isolator operates with a nonreciprocal phase shift in a magneto-optic waveguide. The waveguide with an AlInAs oxide cladding layer miniaturises the nonreciprocal phase shifter to several hundreds of microns.

Original language	English
Pages (from-to)	240-241
Number of pages	2
Journal	Electronics Letters
Volume	37
Issue number	4
DOIs	https://doi.org/10.1049/el:20010145
Publication status	Published - 2001 Feb 15
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:20010145

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abstract = "Selective oxidation of an AlInAs layer grown on an InP substrate is studied with a view to enhancing the magneto-optic effect in an optical isolator with a semiconductor guiding layer. The isolator operates with a nonreciprocal phase shift in a magneto-optic waveguide. The waveguide with an AlInAs oxide cladding layer miniaturises the nonreciprocal phase shifter to several hundreds of microns.",

author = "H. Yokoi and T. Mizumoto and H. Masaki and N. Futakuchi and T. Ohtsuka and Y. Nakano",

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AU - Yokoi, H.

AU - Mizumoto, T.

AU - Masaki, H.

AU - Futakuchi, N.

AU - Ohtsuka, T.

AU - Nakano, Y.

PY - 2001/2/15

Y1 - 2001/2/15

N2 - Selective oxidation of an AlInAs layer grown on an InP substrate is studied with a view to enhancing the magneto-optic effect in an optical isolator with a semiconductor guiding layer. The isolator operates with a nonreciprocal phase shift in a magneto-optic waveguide. The waveguide with an AlInAs oxide cladding layer miniaturises the nonreciprocal phase shifter to several hundreds of microns.

AB - Selective oxidation of an AlInAs layer grown on an InP substrate is studied with a view to enhancing the magneto-optic effect in an optical isolator with a semiconductor guiding layer. The isolator operates with a nonreciprocal phase shift in a magneto-optic waveguide. The waveguide with an AlInAs oxide cladding layer miniaturises the nonreciprocal phase shifter to several hundreds of microns.

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Selective oxidation for enhancement of magneto-optic effect in optical isolator with semiconductor guiding layer

Abstract

ASJC Scopus subject areas

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