Self-Aligned AllnAs/GalnAs HBTs for Digital IC Applications

S. Tanaka, A. Furukawa, T. Baba, K. Ohta, M. Madihian, K. Honjo, A. Furukawa, T. Baba, K. Ohta

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


An AllnAs/GalnAs HBT with a self-aligned device structure has been realised. The smallest device has an emitter-base junction area as small as 10 x 10 μm. A 17-stage non-threshold logic (NTL) ring oscillator is also fabricated, which is the first logic IC implemented with HBTs on InP substrates.

Original languageEnglish
Pages (from-to)872-873
Number of pages2
JournalElectronics Letters
Issue number14
Publication statusPublished - 1988 Jan 1
Externally publishedYes


  • Bipolar devices
  • Integrated circuits
  • Semiconductor devices and materials
  • Transistors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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