Si-O-Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO2

S. Munekuni, N. Nohguchi, H. Nishikawa, Y. Ohki, K. Nagasawa, Y. Hama

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Cite this

@article{7ffbec4e36824f6980293adf7c026272,

title = "Si-O-Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO2",

author = "S. Munekuni and N. Nohguchi and H. Nishikawa and Y. Ohki and K. Nagasawa and Y. Hama",

year = "1991",

month = nov,

day = "1",

language = "English",

volume = "70",

pages = "5054--5062",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Si-O-Si strained bond and paramagnetic defect centers induced by mechanical fracturing in amorphous SiO2

AU - Munekuni, S.

AU - Nohguchi, N.

AU - Nishikawa, H.

AU - Ohki, Y.

AU - Nagasawa, K.

AU - Hama, Y.

PY - 1991/11/1

Y1 - 1991/11/1

M3 - Article

SN - 0021-8979

VL - 70

SP - 5054

EP - 5062

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -