A GaN metal semiconductor field effect transistor (MESFET) with 2μm gate-length and 200 μm gate-width has been fabricated on a sapphire substrate. The electron mobilities for the n-GaN layer were 585cm2/V·s with a carrier concentration of 1.1 x 1017cm-3 at 300K, and 1217cm2/V·s with 2.4 ×1016cm-3 at 77K. A GaN MESFET showed a transconductance of 31 mS/mm and a drain-source current of 288mA/mm. The sidegating effect was observed when the negative bias was applied to the sidegate electrode.
|Number of pages||3|
|Publication status||Published - 1998 Mar 19|
ASJC Scopus subject areas
- Electrical and Electronic Engineering