Sidegating effect of GaN MESFETs grown on sapphire substrate

T. Egawa; H. Ishikawa; T. Jimbo; M. Umeno

doi:10.1049/el:19980423

Sidegating effect of GaN MESFETs grown on sapphire substrate

T. Egawa, H. Ishikawa, T. Jimbo, M. Umeno

Research output: Contribution to journal › Article › peer-review

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Abstract

A GaN metal semiconductor field effect transistor (MESFET) with 2μm gate-length and 200 μm gate-width has been fabricated on a sapphire substrate. The electron mobilities for the n-GaN layer were 585cm²/V·s with a carrier concentration of 1.1 x 10¹⁷cm^-3 at 300K, and 1217cm²/V·s with 2.4 ×10¹⁶cm^-3 at 77K. A GaN MESFET showed a transconductance of 31 mS/mm and a drain-source current of 288mA/mm. The sidegating effect was observed when the negative bias was applied to the sidegate electrode.

Original language	English
Pages (from-to)	598-600
Number of pages	3
Journal	Electronics Letters
Volume	34
Issue number	6
DOIs	https://doi.org/10.1049/el:19980423
Publication status	Published - 1998 Mar 19
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "Sidegating effect of GaN MESFETs grown on sapphire substrate",

abstract = "A GaN metal semiconductor field effect transistor (MESFET) with 2μm gate-length and 200 μm gate-width has been fabricated on a sapphire substrate. The electron mobilities for the n-GaN layer were 585cm2/V·s with a carrier concentration of 1.1 x 1017cm-3 at 300K, and 1217cm2/V·s with 2.4 ×1016cm-3 at 77K. A GaN MESFET showed a transconductance of 31 mS/mm and a drain-source current of 288mA/mm. The sidegating effect was observed when the negative bias was applied to the sidegate electrode.",

author = "T. Egawa and H. Ishikawa and T. Jimbo and M. Umeno",

year = "1998",

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doi = "10.1049/el:19980423",

language = "English",

volume = "34",

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journal = "Electronics Letters",

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T1 - Sidegating effect of GaN MESFETs grown on sapphire substrate

AU - Egawa, T.

AU - Ishikawa, H.

AU - Jimbo, T.

AU - Umeno, M.

PY - 1998/3/19

Y1 - 1998/3/19

N2 - A GaN metal semiconductor field effect transistor (MESFET) with 2μm gate-length and 200 μm gate-width has been fabricated on a sapphire substrate. The electron mobilities for the n-GaN layer were 585cm2/V·s with a carrier concentration of 1.1 x 1017cm-3 at 300K, and 1217cm2/V·s with 2.4 ×1016cm-3 at 77K. A GaN MESFET showed a transconductance of 31 mS/mm and a drain-source current of 288mA/mm. The sidegating effect was observed when the negative bias was applied to the sidegate electrode.

AB - A GaN metal semiconductor field effect transistor (MESFET) with 2μm gate-length and 200 μm gate-width has been fabricated on a sapphire substrate. The electron mobilities for the n-GaN layer were 585cm2/V·s with a carrier concentration of 1.1 x 1017cm-3 at 300K, and 1217cm2/V·s with 2.4 ×1016cm-3 at 77K. A GaN MESFET showed a transconductance of 31 mS/mm and a drain-source current of 288mA/mm. The sidegating effect was observed when the negative bias was applied to the sidegate electrode.

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SP - 598

EP - 600

JO - Electronics Letters

JF - Electronics Letters

IS - 6

ER -

Sidegating effect of GaN MESFETs grown on sapphire substrate

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