Abstract
Two-dimensional analysis of off-state drain currentdrain voltage characteristics in AlGaN/GaN HEMTs is performed; where two cases with a single passivation layer (SiN) and double passivation layers (thin SiN and high-k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly when comparing at the same insulator thickness, because the electric field at the drain edge of the gate is reduced. It is also shown that in the case of double passivation layers, the breakdown voltage becomes higher when the relative permittivity of the second passivation layer becomes higher.
| Original language | English |
|---|---|
| Title of host publication | Informatics, Electronics and Microsystems - TechConnect Briefs 2017 |
| Publisher | TechConnect |
| Pages | 39-42 |
| Number of pages | 4 |
| Volume | 4 |
| ISBN (Electronic) | 9780998878218 |
| Publication status | Published - 2017 |
| Event | 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference - Washington, United States Duration: 2017 May 14 → 2017 May 17 |
Other
| Other | 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo, and the 2017 National SBIR/STTR Conference |
|---|---|
| Country/Territory | United States |
| City | Washington |
| Period | 17/5/14 → 17/5/17 |
Keywords
- Breakdown voltage
- Double passivation layer
- GaN HEMT
- High-k dielectric
ASJC Scopus subject areas
- Fuel Technology
- Surfaces, Coatings and Films
- Biotechnology
- Fluid Flow and Transfer Processes