Simulation of current slump removal in field-plate GaAs MESFETs

A. Nomoto; Y. Sato; Kazushige Horio

Simulation of current slump removal in field-plate GaAs MESFETs

A. Nomoto, Y. Sato, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length L_FP and the thickness of SiO₂ passivation layer d are varied as parameters. It is shown that the drain lag and current slump are reduced by introducing a field plate longer than the length of surface-state region L_s, but they are not removed completely when d is thick. It is clearly shown that when d becomes very thin (≤ 0.02 μm), the lags and current slump are completely removed for L_FP longer than L_s. By carefully examining the L_FP dependence for d = 0.02 μm, it is found that they are completely removed even if L_FP is comparable to L_s.

Original language	English
Title of host publication	NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015
Publisher	Taylor and Francis Inc.
Pages	270-273
Number of pages	4
Volume	4
ISBN (Electronic)	9781498747301
Publication status	Published - 2015
Event	10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States Duration: 2015 Jun 14 → 2015 Jun 17

Other

Other	10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference
Country/Territory	United States
City	Washington
Period	15/6/14 → 15/6/17

Keywords

Current slump
Drain lag
GaAs FET
Gate lag
Surface state

ASJC Scopus subject areas

Surfaces, Coatings and Films
Fluid Flow and Transfer Processes
Biotechnology
Fuel Technology

Cite this

Nomoto, A, Sato, Y & Horio, K 2015, Simulation of current slump removal in field-plate GaAs MESFETs. in NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. vol. 4, Taylor and Francis Inc., pp. 270-273, 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference, Washington, United States, 15/6/14.

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title = "Simulation of current slump removal in field-plate GaAs MESFETs",

abstract = "Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length LFP and the thickness of SiO2 passivation layer d are varied as parameters. It is shown that the drain lag and current slump are reduced by introducing a field plate longer than the length of surface-state region Ls, but they are not removed completely when d is thick. It is clearly shown that when d becomes very thin (≤ 0.02 μm), the lags and current slump are completely removed for LFP longer than Ls. By carefully examining the LFP dependence for d = 0.02 μm, it is found that they are completely removed even if LFP is comparable to Ls.",

keywords = "Current slump, Drain lag, GaAs FET, Gate lag, Surface state",

author = "A. Nomoto and Y. Sato and Kazushige Horio",

year = "2015",

language = "English",

volume = "4",

pages = "270--273",

booktitle = "NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015",

publisher = "Taylor and Francis Inc.",

note = "10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference ; Conference date: 14-06-2015 Through 17-06-2015",

}

TY - GEN

T1 - Simulation of current slump removal in field-plate GaAs MESFETs

AU - Nomoto, A.

AU - Sato, Y.

AU - Horio, Kazushige

PY - 2015

Y1 - 2015

N2 - Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length LFP and the thickness of SiO2 passivation layer d are varied as parameters. It is shown that the drain lag and current slump are reduced by introducing a field plate longer than the length of surface-state region Ls, but they are not removed completely when d is thick. It is clearly shown that when d becomes very thin (≤ 0.02 μm), the lags and current slump are completely removed for LFP longer than Ls. By carefully examining the LFP dependence for d = 0.02 μm, it is found that they are completely removed even if LFP is comparable to Ls.

AB - Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length LFP and the thickness of SiO2 passivation layer d are varied as parameters. It is shown that the drain lag and current slump are reduced by introducing a field plate longer than the length of surface-state region Ls, but they are not removed completely when d is thick. It is clearly shown that when d becomes very thin (≤ 0.02 μm), the lags and current slump are completely removed for LFP longer than Ls. By carefully examining the LFP dependence for d = 0.02 μm, it is found that they are completely removed even if LFP is comparable to Ls.

KW - Current slump

KW - Drain lag

KW - GaAs FET

KW - Gate lag

KW - Surface state

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UR - http://www.scopus.com/inward/citedby.url?scp=84983349629&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84983349629

VL - 4

SP - 270

EP - 273

BT - NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015

PB - Taylor and Francis Inc.

T2 - 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference

Y2 - 14 June 2015 through 17 June 2015

ER -

Simulation of current slump removal in field-plate GaAs MESFETs

Abstract

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Keywords

ASJC Scopus subject areas

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