Simulation of current slump removal in field-plate GaAs MESFETs with a thin passivation layer

A. Nomoto; Y. Sato; Kazushige Horio

Simulation of current slump removal in field-plate GaAs MESFETs with a thin passivation layer

A. Nomoto, Y. Sato, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length L_FP and the thickness of SiO₂ passivation layer T_i are varied as parameters. It is shown that the drain lag is not removed when T_i is thick even if L_FP is longer than the length of surface-state region L_s. But when T_i becomes thinner than 0.02 μm, the drain lag, gate lag and current slump are completely removed by introducing a field plate longer than L_s because the surface-state effects may be masked. By carefully examining the L_FP dependence of lags and current collapse for T_i = 0.02 μm, they are found to be completely removed even if L_FP is alittle shorter than L_s.

Original language	English
Title of host publication	Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016
Publisher	TechConnect
Pages	117-120
Number of pages	4
Volume	4
ISBN (Electronic)	9780997511734
Publication status	Published - 2016
Event	10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference - Washington, United States Duration: 2016 May 22 → 2016 May 25

Other

Other	10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference
Country/Territory	United States
City	Washington
Period	16/5/22 → 16/5/25

Keywords

Current slump
Drain lag
GaAs FET
Gate lag
Surface state

ASJC Scopus subject areas

Fluid Flow and Transfer Processes
Biotechnology
Surfaces, Coatings and Films
Fuel Technology

Cite this

Nomoto, A, Sato, Y & Horio, K 2016, Simulation of current slump removal in field-plate GaAs MESFETs with a thin passivation layer. in Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. vol. 4, TechConnect, pp. 117-120, 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference, Washington, United States, 16/5/22.

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title = "Simulation of current slump removal in field-plate GaAs MESFETs with a thin passivation layer",

abstract = "Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length LFP and the thickness of SiO2 passivation layer Ti are varied as parameters. It is shown that the drain lag is not removed when Ti is thick even if LFP is longer than the length of surface-state region Ls. But when Ti becomes thinner than 0.02 μm, the drain lag, gate lag and current slump are completely removed by introducing a field plate longer than Ls because the surface-state effects may be masked. By carefully examining the LFP dependence of lags and current collapse for Ti = 0.02 μm, they are found to be completely removed even if LFP is alittle shorter than Ls.",

keywords = "Current slump, Drain lag, GaAs FET, Gate lag, Surface state",

author = "A. Nomoto and Y. Sato and Kazushige Horio",

year = "2016",

language = "English",

volume = "4",

pages = "117--120",

booktitle = "Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016",

publisher = "TechConnect",

note = "10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference ; Conference date: 22-05-2016 Through 25-05-2016",

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T1 - Simulation of current slump removal in field-plate GaAs MESFETs with a thin passivation layer

AU - Nomoto, A.

AU - Sato, Y.

AU - Horio, Kazushige

PY - 2016

Y1 - 2016

N2 - Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length LFP and the thickness of SiO2 passivation layer Ti are varied as parameters. It is shown that the drain lag is not removed when Ti is thick even if LFP is longer than the length of surface-state region Ls. But when Ti becomes thinner than 0.02 μm, the drain lag, gate lag and current slump are completely removed by introducing a field plate longer than Ls because the surface-state effects may be masked. By carefully examining the LFP dependence of lags and current collapse for Ti = 0.02 μm, they are found to be completely removed even if LFP is alittle shorter than Ls.

AB - Two-dimensional transient analysis of field-plate GaAs MESFETs is performed by considering surface states in the region from the gate toward the drain. The field-plate length LFP and the thickness of SiO2 passivation layer Ti are varied as parameters. It is shown that the drain lag is not removed when Ti is thick even if LFP is longer than the length of surface-state region Ls. But when Ti becomes thinner than 0.02 μm, the drain lag, gate lag and current slump are completely removed by introducing a field plate longer than Ls because the surface-state effects may be masked. By carefully examining the LFP dependence of lags and current collapse for Ti = 0.02 μm, they are found to be completely removed even if LFP is alittle shorter than Ls.

KW - Current slump

KW - Drain lag

KW - GaAs FET

KW - Gate lag

KW - Surface state

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M3 - Conference contribution

AN - SCOPUS:84988953433

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EP - 120

BT - Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016

PB - TechConnect

T2 - 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 19th Annual Nanotech Conference and Expo, and the 2016 National SBIR/STTR Conference

Y2 - 22 May 2016 through 25 May 2016

ER -

Simulation of current slump removal in field-plate GaAs MESFETs with a thin passivation layer

Abstract

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Keywords

ASJC Scopus subject areas

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