Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs

A. Wakabayashi; Y. Kazami; J. Ozawa; Y. Mitani; K. Horio

Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs

A. Wakabayashi, Y. Kazami, J. Ozawa, Y. Mitani, K. Horio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The kink (or an abnormal increase in output conductance with the drain voltage) in GaAs FETs can occur due to a space-charge effect originated from generated hole capturing by surface states around the gate. Here, device-structure dependence of kink phenomena in GaAs MESFETs is studied particularly by simulating structures that are intended to reduce the surface-state effects at the source side, such as a recessed-gate structure and a structure with n⁺-source region.

Original language	English
Title of host publication	2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Editors	M. Laudon, B. Romanowicz
Pages	8-11
Number of pages	4
Publication status	Published - 2003 Dec 1
Event	2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States Duration: 2003 Feb 23 → 2003 Feb 27

Publication series

Name	2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Volume	2

Conference

Conference	2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Country/Territory	United States
City	San Francisco, CA
Period	03/2/23 → 03/2/27

Keywords

GaAs MESFET
Impact ionization
Kink
Recessed-gate structure
Surface state

ASJC Scopus subject areas

Engineering(all)

Cite this

Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs. / Wakabayashi, A.; Kazami, Y.; Ozawa, J. et al.

2003 Nanotechnology Conference and Trade Show - Nanotech 2003. ed. / M. Laudon; B. Romanowicz. 2003. p. 8-11 (2003 Nanotechnology Conference and Trade Show - Nanotech 2003; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wakabayashi, A, Kazami, Y, Ozawa, J, Mitani, Y & Horio, K 2003, Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs. in M Laudon & B Romanowicz (eds), 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. 2003 Nanotechnology Conference and Trade Show - Nanotech 2003, vol. 2, pp. 8-11, 2003 Nanotechnology Conference and Trade Show - Nanotech 2003, San Francisco, CA, United States, 03/2/23.

@inproceedings{d4e666aa4ac540088583b3cb16f0f151,

title = "Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs",

abstract = "The kink (or an abnormal increase in output conductance with the drain voltage) in GaAs FETs can occur due to a space-charge effect originated from generated hole capturing by surface states around the gate. Here, device-structure dependence of kink phenomena in GaAs MESFETs is studied particularly by simulating structures that are intended to reduce the surface-state effects at the source side, such as a recessed-gate structure and a structure with n+-source region.",

keywords = "GaAs MESFET, Impact ionization, Kink, Recessed-gate structure, Surface state",

author = "A. Wakabayashi and Y. Kazami and J. Ozawa and Y. Mitani and K. Horio",

year = "2003",

month = dec,

day = "1",

language = "English",

isbn = "0972842209",

series = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003",

pages = "8--11",

editor = "M. Laudon and B. Romanowicz",

booktitle = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003",

note = "2003 Nanotechnology Conference and Trade Show - Nanotech 2003 ; Conference date: 23-02-2003 Through 27-02-2003",

}

TY - GEN

T1 - Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs

AU - Wakabayashi, A.

AU - Kazami, Y.

AU - Ozawa, J.

AU - Mitani, Y.

AU - Horio, K.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - The kink (or an abnormal increase in output conductance with the drain voltage) in GaAs FETs can occur due to a space-charge effect originated from generated hole capturing by surface states around the gate. Here, device-structure dependence of kink phenomena in GaAs MESFETs is studied particularly by simulating structures that are intended to reduce the surface-state effects at the source side, such as a recessed-gate structure and a structure with n+-source region.

AB - The kink (or an abnormal increase in output conductance with the drain voltage) in GaAs FETs can occur due to a space-charge effect originated from generated hole capturing by surface states around the gate. Here, device-structure dependence of kink phenomena in GaAs MESFETs is studied particularly by simulating structures that are intended to reduce the surface-state effects at the source side, such as a recessed-gate structure and a structure with n+-source region.

KW - GaAs MESFET

KW - Impact ionization

KW - Kink

KW - Recessed-gate structure

KW - Surface state

UR - http://www.scopus.com/inward/record.url?scp=6344228198&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=6344228198&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:6344228198

SN - 0972842209

T3 - 2003 Nanotechnology Conference and Trade Show - Nanotech 2003

SP - 8

EP - 11

BT - 2003 Nanotechnology Conference and Trade Show - Nanotech 2003

A2 - Laudon, M.

A2 - Romanowicz, B.

T2 - 2003 Nanotechnology Conference and Trade Show - Nanotech 2003

Y2 - 23 February 2003 through 27 February 2003

ER -

Simulation of device-structure dependence of surface-related kink phenomena in GaAs FETs

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

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