Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs

H. Hanawa; Y. Satoh; Kazushige Horio

Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs

H. Hanawa, Y. Satoh, Kazushige Horio

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Two-dimensional analysis of breakdown characteristics in AlGaN/GaN HEMTs is performed as parameters of relative permittivity of the passivation layer ϵ_r and its thickness d. It is shown that as ϵ_r increases, the off-state breakdown voltage V_br increases, because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. It is also shown that V_br increases as d increases. It is concluded that AlGaN/GaN HEMTs with a high-k and thick passivation layer should have high breakdown voltages.

Original language	English
Title of host publication	NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015
Publisher	Taylor and Francis Inc.
Pages	266-269
Number of pages	4
Volume	4
ISBN (Electronic)	9781498747301
Publication status	Published - 2015
Event	10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference - Washington, United States Duration: 2015 Jun 14 → 2015 Jun 17

Other

Other	10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference
Country/Territory	United States
City	Washington
Period	15/6/14 → 15/6/17

Keywords

Breakdown voltage
GaN
HEMT
High-k passivation layer
Two-dimensional analysis

ASJC Scopus subject areas

Surfaces, Coatings and Films
Fluid Flow and Transfer Processes
Biotechnology
Fuel Technology

Cite this

Hanawa, H, Satoh, Y & Horio, K 2015, Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs. in NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. vol. 4, Taylor and Francis Inc., pp. 266-269, 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference, Washington, United States, 15/6/14.

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title = "Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs",

abstract = "Two-dimensional analysis of breakdown characteristics in AlGaN/GaN HEMTs is performed as parameters of relative permittivity of the passivation layer ϵr and its thickness d. It is shown that as ϵr increases, the off-state breakdown voltage Vbr increases, because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. It is also shown that Vbr increases as d increases. It is concluded that AlGaN/GaN HEMTs with a high-k and thick passivation layer should have high breakdown voltages.",

keywords = "Breakdown voltage, GaN, HEMT, High-k passivation layer, Two-dimensional analysis",

author = "H. Hanawa and Y. Satoh and Kazushige Horio",

year = "2015",

language = "English",

volume = "4",

pages = "266--269",

booktitle = "NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015",

publisher = "Taylor and Francis Inc.",

note = "10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference ; Conference date: 14-06-2015 Through 17-06-2015",

}

TY - GEN

T1 - Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs

AU - Hanawa, H.

AU - Satoh, Y.

AU - Horio, Kazushige

PY - 2015

Y1 - 2015

N2 - Two-dimensional analysis of breakdown characteristics in AlGaN/GaN HEMTs is performed as parameters of relative permittivity of the passivation layer ϵr and its thickness d. It is shown that as ϵr increases, the off-state breakdown voltage Vbr increases, because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. It is also shown that Vbr increases as d increases. It is concluded that AlGaN/GaN HEMTs with a high-k and thick passivation layer should have high breakdown voltages.

AB - Two-dimensional analysis of breakdown characteristics in AlGaN/GaN HEMTs is performed as parameters of relative permittivity of the passivation layer ϵr and its thickness d. It is shown that as ϵr increases, the off-state breakdown voltage Vbr increases, because the electric field at the drain edge of the gate is weakened and the buffer leakage current is reduced. It is also shown that Vbr increases as d increases. It is concluded that AlGaN/GaN HEMTs with a high-k and thick passivation layer should have high breakdown voltages.

KW - Breakdown voltage

KW - GaN

KW - HEMT

KW - High-k passivation layer

KW - Two-dimensional analysis

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UR - http://www.scopus.com/inward/citedby.url?scp=84983246770&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84983246770

VL - 4

SP - 266

EP - 269

BT - NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015

PB - Taylor and Francis Inc.

T2 - 10th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 18th Annual Nanotech Conference and Expo, and the 2015 National SBIR/STTR Conference

Y2 - 14 June 2015 through 17 June 2015

ER -

Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs

Abstract

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Keywords

ASJC Scopus subject areas

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