Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate

K. Horio, K. śatoh

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


A numerical simulation of GaAs MESFETs with semiinsulating substrates impurity-compensated to deep levels is carried out by considering the impact ionisation of the carriers. It is shown that in cases where Cr acts as a hole trap, an increase in drain conductance (‘kink’) arises because holes that are generated by impact ionisation flow into the substrate and are captured by the traps to strongly modulate the space-charge distributions.

Original languageEnglish
Pages (from-to)1128-1130
Number of pages3
JournalElectronics Letters
Issue number12
Publication statusPublished - 1993 Jun


  • Field-effect transistors
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


Dive into the research topics of 'Simulation of kink behaviour in GaAs MESFET with semi-insulating substrate'. Together they form a unique fingerprint.

Cite this